Product Information

TPH2R306NH,L1Q(M

Name: TPH2R306NH,L1Q(M
Brand: Toshiba
SKU: TPH2R306NHL1QM_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

TPH2R306NH,L1Q(M electronic component of Toshiba

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See Product Specifications
Datasheet

Transistor: N-MOSFET; unipolar; 60V; 130A; 78W; SOP8A

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 5.5957 ea
Line Total: USD 5.6

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Mon. 03 Jun MOQ : 1 Multiples : 5000 TPH2R306NH,L1Q(M Toshiba	1 : USD 5.5957 3 : USD 2.3997 21 : USD 1.5315

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Additional Infomation About Product

The TPH2R306NH,L1Q(M is a N-MOSFET transistor manufactured by Toshiba. It is a unipolar transistor with a maximum drain-source voltage of 60V, a maximum drain current of 130A, a maximum power dissipation of 78W, and a package of SOP8A. It is designed for various applications such as automotive, power control, and power supply.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Case Sop8a Sop8a
Mounting Smd Smd
Kind Of Package REEL , TAPE REEL , TAPE
Polarisation Unipolar Unipolar
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 60 V 60 V
Drain Current 130 A 130 A
Gate-Source Voltage 20 V 20 V
On-State Resistance 4.7 mOhms 4.7 mOhms
Gate Charge 72 nC 72 nC
Power Dissipation 78 W 78 W