Product Information

TPH1400ANH,L1Q

TPH1400ANH,L1Q electronic component of Toshiba

Datasheet
N-Channel 100 V 24A (Tc) 1.6W (Ta), 48W (Tc) Surface Mount 8-SOP Advance (5x5)
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.7491 ea
Line Total: USD 3745.5

0 - Global Stock
MOQ: 5000  Multiples: 5000
Pack Size: 5000

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0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5000
Multiples : 5000
5000 : USD 0.932
10000 : USD 0.9226
15000 : USD 0.9134
20000 : USD 0.9042
25000 : USD 0.8952
30000 : USD 0.8862
40000 : USD 0.8774
50000 : USD 0.8686
100000 : USD 0.86

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Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 1.8625
10 : USD 1.5948
100 : USD 1.2438
500 : USD 1.0275
1000 : USD 0.8111
2000 : USD 0.7571

0 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 1.8625
10 : USD 1.5948
100 : USD 1.2438
500 : USD 1.0275
1000 : USD 0.8111
2000 : USD 0.7571

0 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5000
Multiples : 5000
5000 : USD 0.7491
10000 : USD 0.6922

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Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 3.6764
10 : USD 1.3269
100 : USD 1.0563
250 : USD 1.0222
500 : USD 0.8451
1000 : USD 0.7446
2500 : USD 0.7219
5000 : USD 0.699

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

TPH1400ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1400ANHTPH1400ANHTPH1400ANHTPH1400ANH 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small, thin package (2) High-speed switching (3) Small gate charge: Q = 9.4 nC (typ.) SW (4) Low drain-source on-resistance: R = 11.3 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (6) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.3 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 42 A D Drain current (DC) (T = 25) (Note 1) I 24 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 91 DP Power dissipation (T = 25) P 48 W c D Power dissipation (t = 10 s) (Note 3) P 2.8 W D Power dissipation (t = 10 s) (Note 4) P 1.6 W D Single-pulse avalanche energy (Note 5) E 46 mJ AS Avalanche current I 24 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-04 2014-02-17 1 Rev.2.0TPH1400ANH 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25) R 2.6 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 44.6 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 78.1 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 60 V, T = 25 (initial), L = 0.087 mH, R = 1.0 , I = 24 A DD ch G AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-17 2 Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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