Product Information

TPC8126,LQ(CM

TPC8126,LQ(CM electronic component of Toshiba

Datasheet
Toshiba MOSFET N-Ch -30V FET 2400pF -11A 1.9W
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.4237
10 : USD 0.3556
30 : USD 0.3062
100 : USD 0.2654
500 : USD 0.2584
1000 : USD 0.255
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000
3000 : USD 0.5925
9000 : USD 0.5836
24000 : USD 0.5658
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Brand Category
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Additional Infomation About Product

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: R = 7.5 m (typ.) DS (ON) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement mode: V = 0.8 to 2.0 V (V = 10 V, I = 0.5mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Drain-gate voltage (R = 20 k) V 30 V GS DGR Gate-source voltage V 25/+20 V GSS DC (Note 1) I 11 D Drain current A Pulse (Note 1) I 44 DP Drain power dissipation (t = 10 s) P 1.9 W D (Note 2a) JEDEC Drain power dissipation (t = 10 s) P 1.0 W D JEITA (Note 2b) Single pulse avalanche energy TOSHIBA 2-6J1B E 79 mJ AS (Note 3) Weight: 0.080 g (typ.) Avalanche current (Note 1) I 11 A AR Channel temperature T 150 C ch Circuit Configuration Storage temperature range T 55 to 150 C stg 8 6 7 5 Note 1, Note 2, Note 3 : See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 1 2 3 4 Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2009-10 1 2013-11-01 TPC8126 Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to ambient R 65.8 C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 125 C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 4) Part No. (or abbreviation code) TPC8126 Lot No. Note 5 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a)Device mounted on a glass-epoxy board (a) (b)Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25 C (initial), L = 500 H, R = 25 , I = 11 A DD ch G AR Note 4: on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) Note 5: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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