Product Information

TLP2366(E(T

TLP2366(E(T electronic component of Toshiba

Datasheet
High Speed Optocouplers
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

14: USD 0.8586 ea
Line Total: USD 12.02

1466 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 14  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
111 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 29
Multiples : 1

Stock Image

TLP2366(E(T
Toshiba

29 : USD 1.3949
50 : USD 1.2416
100 : USD 1.0762

1466 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 14
Multiples : 1

Stock Image

TLP2366(E(T
Toshiba

14 : USD 0.8586
25 : USD 0.8369
50 : USD 0.8202

630 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 81
Multiples : 1

Stock Image

TLP2366(E(T
Toshiba

81 : USD 1.2544
100 : USD 1.2293

Read More Specifications

     
Manufacturer
Product Category
Series
Vf - Forward Voltage
If - Forward Current
Brand
Product Type
Subcategory
Taric
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Additional Infomation About Product

TLP2366 Photocouplers GaAAs Infrared LED & Photo IC TLP2366TLP2366TLP2366TLP2366 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Factory Networking High-Speed Digital Interfacing for Instrumentation and Control Devices Plasma Display Panels (PDPs) 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2366 consists of a high-output GaAAs light-emitting diode coupled with a high-speed photo- diode-transistor chip. The TLP2366 guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. It is offered in the SO6 package. The TLP2366 has an internal Faraday shield that provides a guaranteed common- mode transient immunity of 20 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Inverter logic type (Totem pole output) (2) Package: SO6 (3) Operating temperature: -40 to 125 (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 20 MBd (typ.) (NRZ) (6) Threshold input current: 3.5 mA (max) (7) Supply current: 3 mA (max) (8) Common-mode transient immunity: 20 kV/s (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). Start of commercial production 2011-06 2015 Toshiba Corporation 2015-12-09 1 Rev.5.0TLP2366 4. 4. 4. 4. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: Anode 3: Cathode 4: GND 5: V (Output) O 6: V CC 11-4L1S 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1F bypass capacitor must be connected between pin 6 and pin 4. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. 6.1. 6.1. Truth TableTruth TableTruth TableTruth Table Input LED M1 M2 Output H ON OFF ON L L OFF ON OFF H 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 2015 Toshiba Corporation 2015-12-09 2 Rev.5.0

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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