Product Information

TLP2703(E(T

TLP2703(E(T electronic component of Toshiba

Datasheet
High Speed Optocouplers

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

125: USD 0.5635 ea
Line Total: USD 70.44

0 - Global Stock
MOQ: 125  Multiples: 125
Pack Size: 125
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1000

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TLP2703(E(T
Toshiba

1 : USD 0.7425
5 : USD 0.5897
11 : USD 0.553
25 : USD 0.5249
49 : USD 0.5249

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 125
Multiples : 125

Stock Image

TLP2703(E(T
Toshiba

125 : USD 0.5635
250 : USD 0.4943

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 125
Multiples : 125

Stock Image

TLP2703(E(T
Toshiba

125 : USD 0.5099

     
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TLP2703 Photocouplers GaAAs Infrared LED & Photo IC TLP2703TLP2703TLP2703TLP2703 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Communications Equipment Transistor Inverters Home Electric Appliances 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2703 consists of a high-output GaAAs light-emitting diode coupled with a high-speed photodiode transistor chip. It is housed in a thin SO6L package with a thickness of 2.3 mm (max). The TLP2703 guarantees an isolation voltage of 5 kVrms (min) and is compliant with international safety standards for reinforced insulation. Due to the use of a high-speed, high-gain detector element, the TLP2703 provides a current transfer ratio of 900 % ( I = 0.5 mA) minimum over -40 to 125 and thus is ideal for applications which require low input F current and high-speed data transmission. The TLP2703 supports a data rate of 100 kbps, and fills a gap in our product line between general-purpose transistor-output photocouplers and IC-output photocouplers with a data rate of 1 Mbps. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Package: SO6L (2) Operating temperature: -40 to 125 (3) Current transfer ratio: 900 % (min) I = 0.5 mA F (4) Maximum output current: 80 mA (5) Propagation delay time: t = 15 s (max), t = 50 s (max) R = 4.7 k, I = 0.5 mA, T = 25 pHL pLH L F a (6) Isolation voltage: 5000 Vrms (min) (7) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065 or EN60950-1, EN62368-1 (Pending) (Note 1)(Note 1)(Note 1) Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). Start of commercial production 2014-06 2015 Toshiba Corporation 2015-11-12 1 Rev.4.0TLP2703 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 2: N.C. 3: Cathode 4: GND (Emitter) 5: Output (Collector) 6: V CC 11-4N1A 5. 5. 5. 5. Internal CircuitInternal CircuitInternal CircuitInternal Circuit 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. 6.1. 6.1. Truth TableTruth TableTruth TableTruth Table Input LED Output H ON L L OFF H 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Dimension Unit Package height 2.3 (max) mm Clearance distances 8.0 (min) Clearance distances 8.0 (min) Internal isolation thickness 0.4 (min) 2015 Toshiba Corporation 2015-11-12 2 Rev.4.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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