Product Information

TLP2366(TPL,E

TLP2366(TPL,E electronic component of Toshiba

Datasheet
Logic Output Optoisolator 20MBd Push-Pull, Totem Pole 3750Vrms 1 Channel 20kV/µs CMTI 6-SO, 5 Lead
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6175 ea
Line Total: USD 0.62

1 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.5985

11881 - WHS 2


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.4896
10 : USD 1.2628
30 : USD 1.1365
100 : USD 0.9964
500 : USD 0.8583
1000 : USD 0.8286

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Data Rate
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Packaging
Number of Channels
Output Type
Isolation Voltage
Vf - Forward Voltage
If - Forward Current
Vr - Reverse Voltage
Pd - Power Dissipation
Brand
Fall Time
Rise Time
Factory Pack Quantity :
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Additional Infomation About Product

TLP2366 Photocouplers Infrared LED & Photo IC TLP2366TLP2366TLP2366TLP2366 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Factory Networking High-Speed Digital Interfacing for Instrumentation and Control Devices Plasma Display Panels (PDPs) 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2366 consists of a high-output infrared LED coupled with a high-speed photo-diode-transistor chip. The TLP2366 guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. It is offered in the SO6 package. The TLP2366 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 20 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Inverter logic type (totem pole output) (2) Package: SO6 (3) Operating temperature: -40 to 125 (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 20 MBd (typ.) (NRZ) (6) Threshold input current: 3.5 mA (max) (7) Supply current: 3 mA (max) (8) Common-mode transient immunity: 20 kV/s (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). Start of commercial production 2011-06 2015-2019 2019-11-26 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0TLP2366 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathode 4: GND 5: V (output) O 6: V CC 11-4L1S 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1-F bypass capacitor must be connected between pin 6 and pin 4. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. Truth TableTruth Table 6.1. 6.1. Truth TableTruth Table Input LED M1 M2 Output H ON OFF ON L L OFF ON OFF H 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 2015-2019 2019-11-26 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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