Product Information

TLP2368(E(O

TLP2368(E(O electronic component of Toshiba

Datasheet
High Speed Optocouplers

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5096 ea
Line Total: USD 2.51

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TLP2368(E(O
Toshiba

1 : USD 2.5096
10 : USD 1.6562
50 : USD 1.2759
100 : USD 1.1914
250 : USD 1.0985

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TLP2368(E(O
Toshiba

1 : USD 3.7537
4 : USD 1.9015
29 : USD 1.2232

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 29
Multiples : 29

Stock Image

TLP2368(E(O
Toshiba

29 : USD 0.8024
50 : USD 0.7681

     
Manufacturer
Product Category
Data Rate
Isolation Voltage
Brand
No. Of Channels
Optocoupler Case Style
No. Of Pins
Svhc
Input Current
Optocoupler Output Type
Output Voltage
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TLP2368 Photocouplers GaAAs Infrared LED & Photo IC TLP2368TLP2368TLP2368TLP2368 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Factory Automation (FA) Plasma Display Panels (PDPs) Measuring Instruments 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2368 consists of a high-output GaAAs light-emitting diode coupled with integrated high gain, high-speed photodetectors. The TLP2368 guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. It is housed in the SO6 package. The TLP2368 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 20 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Inverter logic type (open collector output) (2) Package: SO6 (3) Operating temperature: -40 to 125 (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 20 MBd (typ.) (NRZ) (6) Threshold input current: 5.0 mA (max) (7) Supply current: 4 mA (max) (8) Common-mode transient immunity: 20 kV/s (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). Start of commercial production 2011-05 2015 Toshiba Corporation 2015-12-18 1 Rev.6.0TLP2368 4. 4. 4. 4. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: Anode 3: Cathode 4: GND 5: V (Output) O 6: V CC 11-4L1S 5. 5. 5. 5. Internal CircuitInternal CircuitInternal CircuitInternal Circuit 6. Principle of Operation 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. 6.1. 6.1. Truth TableTruth TableTruth TableTruth Table Input LED Output H ON L L OFF H 6.2. Mechanical Parameters 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 2015 Toshiba Corporation 2015-12-18 2 Rev.6.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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