Product Information

TLP2309(TPL,E(T

TLP2309(TPL,E(T electronic component of Toshiba

Datasheet
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 5-Pin SO T/R
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.5606 ea
Line Total: USD 1681.8

119310 - Global Stock
Ships to you between
Tue. 07 May to Mon. 13 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
119310 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.5606
6000 : USD 0.5549
9000 : USD 0.549
15000 : USD 0.538

406 - Warehouse 2


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 98
Multiples : 1
98 : USD 0.985

2665 - Warehouse 3


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 49
Multiples : 1
49 : USD 1.1045
50 : USD 0.9398
100 : USD 0.8044
200 : USD 0.7632
500 : USD 0.6986
1000 : USD 0.6982

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
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Additional Infomation About Product

TLP2309 Photocouplers Infrared LED & Photo IC TLP2309TLP2309TLP2309TLP2309 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Industrial Inverters Switching Power Supplies High-Speed Digital Interfacing 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2309 consists of a high-output infrared LED coupled with a high-speed photo-diode-transistor chip. It is housed in the SO6 package. The TLP2309 guarantees operation at up to 110 and on supplies both 3.3 V and 5 V. Also, since the TLP2309 guarantees a creepage / clearance distance 5.0 mm and internal isolation thickness 0.4 mm, this product is in the reinforced insulation class according to international safety standards. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Inverter logic type (open collector output) (2) Package: SO6 (3) Operating temperature: -40 to 110 (4) Supply voltage: 3.3 V / 5 V (5) Data transfer rate: 1 Mbit/s (typ.) (NRZ) (6) Common-mode transient immunity: 15 kV/ s (min) (7) Isolation voltage: 3750 Vrms (min) (8) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). 4. Packaging and Pin Configuration 4. 4. 4. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: Anode 3: Cathode 4: GND 5: V (Output) O 6: V CC 11-4L1S Start of commercial production 2011-04 2015-2019 2019-11-26 1 Toshiba Electronic Devices & Storage Corporation Rev.8.0TLP2309 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1-F bypass capacitor must be connected between pin 6 and pin 4. 6. 6. Principle of OperationPrinciple of Operation 6. 6. Principle of OperationPrinciple of Operation 6.1. 6.1. 6.1. 6.1. Truth TableTruth TableTruth TableTruth Table Input LED Output H ON L L OFF H 6.2. 6.2. Mechanical ParametersMechanical Parameters 6.2. 6.2. Mechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 2015-2019 2019-11-26 2 Toshiba Electronic Devices & Storage Corporation Rev.8.0

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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