Product Information

TLP2362(TPL,E(O

TLP2362(TPL,E(O electronic component of Toshiba

Datasheet
TLP2362TPLEO toshiba high speed optocouplers photocouplers optoelectronics
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

29: USD 0.8776 ea
Line Total: USD 25.45

0 - Global Stock
MOQ: 29  Multiples: 29
Pack Size: 29

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0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 29
Multiples : 29
29 : USD 0.8776

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RoHS - XON
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Additional Infomation About Product

TLP2362 Photocouplers GaAAs Infrared LED & Photo IC TLP2362TLP2362TLP2362TLP2362 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Factory Automation (FA) Plasma Display Panels (PDPs) Measuring Instruments 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2362 consists of a high-output GaAAs light-emitting diode coupled with integrated high gain, high-speed photodetectors. The TLP2362 guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. It is housed in the SO6 package. The TLP2362 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 20 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Inverter logic type (open collector output) (2) Package: SO6 (3) Operating temperature: -40 to 125 (4) Supply voltage: 2.7 to 5.5 V (5) Data transfer rate: 10 MBd (typ.) (NRZ) (6) Threshold input current: 5.0 mA (max) (7) Supply current: 4 mA (max) (8) Common-mode transient immunity: 20 kV/s (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). 4. Packaging and Pin Assignment 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathode 4: GND 5: V (output) O 6: V CC 11-4L1S Start of commercial production 2011-05 2016-2017 2017-12-19 1 Toshiba Electronic Devices & Storage Corporation Rev.7.0TLP2362 5. 5. 5. 5. Internal Equivalent Circuit (Note)Internal Equivalent Circuit (Note)Internal Equivalent Circuit (Note)Internal Equivalent Circuit (Note) Note: A 0.1-F bypass capacitor must be connected between pin 6 and pin 4. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. Truth TableTruth Table 6.1. 6.1. Truth TableTruth Table Input LED Output H ON L L OFF H 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 2016-2017 2017-12-19 2 Toshiba Electronic Devices & Storage Corporation Rev.7.0

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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