Product Information

CMS10(TE12L,Q,M)

Hot CMS10(TE12L,Q,M) electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers Diode SCHottky 40V, 1A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2842 ea
Line Total: USD 0.28

1023 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.1526

1023 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2842
10 : USD 0.2052
30 : USD 0.1613
100 : USD 0.1396
500 : USD 0.1299
1000 : USD 0.1241

2861 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3809
10 : USD 0.3713
100 : USD 0.2622
500 : USD 0.2124
1000 : USD 0.178
3000 : USD 0.1566
9000 : USD 0.1519
24000 : USD 0.1495

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CMS10 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS10 Switching Mode Power Supply Applications Unit: mm Portable Equipment Battery Applications Forward voltage: V = 0.55 V (max) FM Average forward current: I = 1.0 A F (AV) Repetitive peak reverse voltage: V = 40 V RRM Suitable for compact assembly due to small surface-mount package TM M FLAT (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 40 V RRM 1.0 Average forward current (Note 1) I A F (AV) (Ta = 21C) Peak one cycle surge forward current I 25 (50 Hz) A FSM (non-repetitive) Junction temperature T 40~150 C j JEDEC Storage temperature T 40~150 C stg JEITA Note 1: Device mounted on a glass-epoxy board TOSHIBA 3-4E1A (board size: 50 mm 50 mm, soldering land: 6 mm 6 mm) Weight: 0.023 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.1 A 0.34 FM (1) FM Peak forward voltage V V I = 0.5 A 0.41 FM (2) FM V I = 1.0 A 0.47 0.55 FM (3) FM I V = 5 V 1.0 RRM RRM Repetitive peak reverse current A I V = 40 V 8.0 500 RRM RRM Junction capacitance C V = 10 V, f = 1.0 MHz 50 pF j R Device mounted on a ceramic board 60 (soldering land: 2 mm 2 mm) Thermal resistance R C/W th (j-a) Device mounted on a glass-epoxy board 135 (soldering land: 6 mm 6 mm) Thermal resistance R 16 C/W th (j-) Start of commercial production 2000-07 1 2013-11-01 CMS10 Marking Abbreviation Code Part No. S0 CMS10 Standard Soldering Pad Unit: mm 1.4 3.0 1.4 Handling Precaution Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V : Use this rating with reference to the above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account designing a device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating F(AV) of I and T be below 120C. When using this device, take the margin into consideration by F(AV) j using an allowable Tamax-I curve. F(AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. We recommend that the j device be used at a T of below 120C. j Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Please refer to the Rectifiers databook for further information. 2 2013-11-01 2.1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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