Product Information

CRS04

CRS04 electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers 40V 1A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.2824 ea
Line Total: USD 28.24

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 100
Multiples : 1

Stock Image

CRS04
Toshiba

100 : USD 0.2824
500 : USD 0.1712
1500 : USD 0.1679

     
Manufacturer
Product Category
Package / Case
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Diode Case Style
No. Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Product Range
Svhc
Current Ifsm
Current Ir Max
Diode Type
Junction Temperature Tj Max
Junction Temperature Tj Min
Operating Temperature Min
Operating Temperature Range
Semiconductor Technology
Termination Type
LoadingGif

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CRS04 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS04 Switching Mode Power Supply Applications Unit: mm Portable Equipment Battery Applications Forward voltage: V = 0.49 V (max) FM Average forward current: I = 1.0 A F (AV) Repetitive peak reverse voltage: V = 40 V RRM Suitable for compact assembly due to small surface-mount package TM SFLAT (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 40 V RRM Average forward current I 1.0 (Note 1) A F (AV) Peak one cycle surge forward current I 20 (50 Hz) A FSM (non-repetitive) Junction temperature T 40~150 C j Storage temperature T 40~150 C stg JEDEC Note 1: Ta = 31C JEITA Device mounted on a glass-epoxy board (board size: 50 mm 50 mm, land size: 6 mm 6 mm) TOSHIBA 3-2A1A Note 2: Using continuously under heavy loads (e.g. the application of Weight: 0.013 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.1 A 0.395 FM (1) FM Peak forward voltage V V I = 0.7 A 0.475 0.49 FM (2) FM V I = 1.0 A 0.51 FM (3) FM I V = 5 V 0.6 RRM (1) RRM Repetitive peak reverse current A I V = 40 V 100 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 47 pF j R Device mounted on a ceramic board 70 (soldering land: 2 mm 2 mm) Thermal resistance (junction to ambient) R C/W th (j-a) Device mounted on a glass-epoxy board 140 (soldering land: 6 mm 6 mm) Thermal resistance (junction to lead) R 20 C/W th (j-) Start of commercial production 1999-07 1 2013-11-01 CRS04 Marking Abbreviation Code Part No. S4 CRS04 Standard Soldering Pad Unit: mm 1.2 1.2 2.8 Handling Precaution Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V : Use this rating with reference to the above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account designing a device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating F(AV) of I and T be below 120C. When using this device, take the margin into consideration by F(AV) j using an allowable Tamax-I curve. F(AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. We recommend that the j device be used at a T of below 120C. j Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Please refer to the Rectifiers databook for further information. 2 2013-11-01

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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