CMS15(TE12L,Q)

CMS15 TOSHIBA Schottky Barrier Diode CMS15 Switching Mode Power Supply Applications Unit: mm (Output voltage: 12 V) DC/DC Converter Applications Forward voltage: V = 0.58 V (max) FM Average forward current: I = 3.0 A F (AV) Repetitive peak reverse voltage: V = 60 V RRM Suitable for compact assembly due to small surface-mount package TM M FLAT (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 60 V RRM Average forward current I 3.0 (Note 1) A F (AV) Non-repetitive peak surge current I 60 (50Hz) A FSM Junction temperature T 40~150 C j Storage temperature range T 40~150 C stg Note 1: T = 95C Device mounted on a ceramic board JEDEC Board size: 50 mm 50 mm Soldering size: 2 mm 2 mm JEITA Board thickness: 0.64 t TOSHIBA 3-4E1A Rectangular waveform ( = 180), V = 30 V R Note 2: Using continuously under heavy loads (e.g. the application of Weight: 0.023 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 1.0 A (pulse test) 0.43 FM (1) FM Peak forward voltage V I = 2.0 A (pulse test) 0.49 V FM (2) FM V I = 3.0 A (pulse test) 0.55 0.58 FM (3) FM I V = 5 V (pulse test) 1.0 RRM (1) RRM Peak repetitive reverse current A I V = 60 V (pulse test) 25 300 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 102 pF j R Device mounted on a ceramic board (board size: 50 mm 50 mm) 60 (soldering land: 2 mm 2 mm) (board thickness: 0.64 t) Device mounted on a glass-epoxy board Thermal resistance (board size: 50 mm 50 mm) R 135 C/W th (j-a) (junction to ambient) (soldering land: 6 mm 6 mm) (board thickness: 1.6 t) Device mounted on a glass-epoxy board (board size: 50 mm 50 mm) 210 (soldering land: 2.1 mm 1.4 mm) (board thickness: 1.6 t) Thermal resistance R 16 C/W th (j-) (junction to lead) Start of commercial production 2003-05 1 2013-11-01 CMS15 Marking Abbreviation Code Part No. SE CMS15 Standard Soldering Pad Unit: mm 1.4 3.0 1.4 Handling Precaution 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating method that we recommend when you design a circuit with a device. V : Use this rating with reference to (1) above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account designing a device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum F (AV) rating of I and T be below 120C. When using this device, take a margin into consideration by using F (AV) j an allowable Tamax-I curve. F (AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal FSM operation, which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. j We recommend that the device be used at a T of below 120C. j 3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) Please refer to the Rectifiers databook for further information. 2 2013-11-01 2.1