CMS15 TOSHIBA Schottky Barrier Diode CMS15 Unit: mm Radio-Frequency Rectification in Switching Regulators DC-DC Converters Repetitive peak reverse voltage : V = 60 V RRM Average forward current : I = 3.0 A F (AV) Peak forward voltage : V = 0.58 V (max) FM Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: M FLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 60 V RRM Average forward current I 3.0 (Note 1) A F (AV) Non-repetitive peak forward surge current I 60 (50Hz) A FSM Junction temperature T 40 to 150 C j Storage temperature range T 40 to 150 C JEDEC stg Note 1: T = 95C Device mounted on a ceramic board JEITA Board size : 50 mm 50 mm TOSHIBA 3-4E1S Soldering land size : 2 mm 2 mm Board thickness : 0.64 mm Weight: 0.023 g (typ.) Rectangular waveform : = 180, V = 30 V R Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 1.0 A (pulse test) 0.43 FM (1) FM Peak forward voltage V I = 2.0 A (pulse test) 0.49 V FM (2) FM VFM (3) IFM = 3.0 A (pulse test) 0.55 0.58 I V = 5 V (pulse test) 1.0 RRM (1) RRM Repetitive peak reverse current A I V = 60 V (pulse test) 25 300 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 102 pF j R Device mounted on a ceramic board board size : 50 mm 50 mm 60 soldering land size : 2 mm 2 mm board thickness : 0.64 mm Device mounted on a glass-epoxy board Thermal resistance board size : 50 mm 50 mm R 135 C/W th (j-a) (junction to ambient) soldering land size : 6 mm 6 mm board thickness : 1.6 mm Device mounted on a glass-epoxy board board size : 50 mm 50 mm 210 soldering land size : 2.1 mm 1.4 mm board thickness : 1.6 mm Thermal resistance(junction to lead) R 16 C/W th (j-) Start of commercial production 2003-05 1 2018-08-03 CMS15 Marking Abbreviation Code Part No. SE CMS15 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Handling Precaution 1) Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings denote the absolute maximum ratings, whicarh e rated values and must not be exceeded during operation, even for an instant. The following are the general derating methodst hat we recommend when you design a circuit with a device. VRRM: Use this rating with reference to (1) above. VRRM has a temperature coefficient of 0.1%/C. Take this temperature coefficient into account designing a device at low temperature. IF (AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF (AV) and Tj be below 120C. When using this device, take a margin into consideration by using an allowable Ta max-IF (AV) curve. IFSM: This rating specifies the nonr-epetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a Tj of below 120C. 3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) For other design considerations, see the Toshiba website. 2 2018-08-03 2.1