2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit: mm Motor Drive Applications Low drain-source ON-resistance: R = 1.4 (typ.) DS (ON) High forward transfer admittance: Y = 6.0 S (typ.) fs Low leakage current: I = 100 A (max) (V = 800 V) DSS DS Enhancement-model: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 1000 V DSS Drain-gate voltage (R = 20 k) V 1000 V GS DGR Gate-source voltage V 30 V GSS 1. GATE DC (Note 1) I 8 D Drain current A 2. DRAIN (HEAT SINK) Pulse (Note 1) I 24 DP 3. SOURSE Drain power dissipation (Tc = 25C) P 150 W D JEDEC Single pulse avalanche energy E 910 mJ AS JEITA (Note 2) TOSHIBA 216C1B Avalanche current I 8 A AR Repetitive avalanche energy (Note 3) E 15 mJ AR Weight: 4.6 g (typ.) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 0.833 C/W th (ch-c) Thermal resistance, channel to ambient R 50 C/W 1 th (ch-a) Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: V = 90 V, T = 25C, L = 26.3 mH, R = 25 , I = 8 A DD ch G AR 3 Note 3: Repetitive rating: Pulse width limited by max junction temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2010-01-29 2SK2613 = Electrical Characteristics (Ta 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 10 A GSS GS DS Gate-source breakdown voltage V I = 10 A, V = 0 V 30 V (BR) GSS G DS Drain cut-OFF current I V = 800 V, V = 0 V 100 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 1000 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON resistance R V = 10 V, I = 4 A 1.4 1.7 DS (ON) GS D Forward transfer admittance Y V = 20 V, I = 4 A 2.0 6.0 S fs DS D Input capacitance C 2000 iss Reverse transfer capacitance C V = 25 V, V = 0 V, f = 1 MHz 30 pF rss DS GS Output capacitance C 200 oss Rise time t 20 r 10 V I = 4 A D V GS V OUT 0 V Turn-ON time t 40 on R = 100 L Switching time ns Fall time t 30 f V 400 V DD Duty 1%, t = 10 s w Turn-OFF time t 100 off Total gate charge Q 65 g (gate-source plus gate-drain) V 400 V, V = 10 V, I = 8 A nC DD GS D Gate-source charge Q 40 gs Gate-drain (miller) charge Q 25 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current (Note 1) I 8 A DR Pulse drain reverse current (Note 1) I 24 A DRP Forward voltage (diode) V I = 8 A, V = 0 V 1.9 V DSF DR GS Reverse recovery time t I = 8 A, V = 0 V, 1600 ns rr DR GS dI /dt = 100 A/s Reverse recovery charge Q 24 C DR rr Marking TOSHIBA Note 4: A line under a Lot No. identifies the indication of product K2613 Part No. (or abbreviation code) Labels. Lot No. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-01-29 4.7