Product Information

2SK3075(TE12L,Q)

2SK3075(TE12L,Q) electronic component of Toshiba

Datasheet
RF MOSFET Transistors N-Ch Radio Freq 5A 20W 30V VDSS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.573 ea
Line Total: USD 8.57

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 8.573
10 : USD 6.5438
50 : USD 5.6101
200 : USD 5.0951
500 : USD 4.788

0 - Warehouse 2


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1
1 : USD 9.5833
10 : USD 6.2758
25 : USD 5.9341
100 : USD 5.147
500 : USD 4.3806
1000 : USD 3.5936
5000 : USD 3.4693

0 - Warehouse 3


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 18.1827
2 : USD 13.8135
4 : USD 13.0536

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Toshiba"

Image Description
2SK3078A(TE12L,F) electronic component of Toshiba 2SK3078A(TE12L,F)

RF MOSFET Transistors N-Ch Radio Freq 0.5 3W 10V VDSS
Stock : 2214

2SK3301(TE16L1,NQ) electronic component of Toshiba 2SK3301(TE16L1,NQ)

Trans MOSFET N-CH 900V 1A 3-Pin(2+Tab) New PW-Mold T/R
Stock : 0

2SK3476(TE12L,Q) electronic component of Toshiba 2SK3476(TE12L,Q)

RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS
Stock : 811

2SK3132(Q) electronic component of Toshiba 2SK3132(Q)

Trans MOSFET N-CH 500V 50A 3-Pin(3+Tab) TO-3PL
Stock : 0

2SK3320-BL(TE85L,F electronic component of Toshiba 2SK3320-BL(TE85L,F

JFET Junction FET N-Ch x2 1.2V to 14mA 10mA
Stock : 0

2SK3475TE12LF electronic component of Toshiba 2SK3475TE12LF

Toshiba RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS
Stock : 943

2SK3565(Q,M) electronic component of Toshiba 2SK3565(Q,M)

Transistor: N-MOSFET; unipolar; 900V; 5A; 45W; TO220FP
Stock : 98

2SK3564(STA4,Q,M) electronic component of Toshiba 2SK3564(STA4,Q,M)

Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220SIS
Stock : 100

2SK3471(TE12L,F) electronic component of Toshiba 2SK3471(TE12L,F)

MOSFET, N CH, 0.5A, 500V, SC-62
Stock : 0

2SK3475(TE12L,F) electronic component of Toshiba 2SK3475(TE12L,F)

RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS
Stock : 112

More Products By Category "RF MOSFET Transistors"

Image Description
MRF1K50NR5 electronic component of NXP MRF1K50NR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
Stock : 40

MRF13750H-915MHZ electronic component of NXP MRF13750H-915MHZ

Sub-GHz Development Tools 750W 915MHz
Stock : 2

MMRF1310HR5 electronic component of NXP MMRF1310HR5

RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Stock : 49

UF28150J electronic component of MACOM UF28150J

RF MOSFET Transistors 100-500MHz 150Watts 28Volt Gain 8dB
Stock : 24

IXFX21N100F electronic component of IXYS IXFX21N100F

RF MOSFET Transistors IXFX21N100F F-Class HiPerRF Capable MOSFET IXFX21N100F IXYS
Stock : 0

STAC2943 electronic component of STMicroelectronics STAC2943

RF MOSFET Transistors RF PWR Trans N-Ch 50V 150MHz FET
Stock : 0

MRF1K50H-TF4 electronic component of NXP MRF1K50H-TF4

Sub-GHz Development Tools MRF1K50H 230 MHz Reference Circuit
Stock : 0

MRF6V2150NR1 electronic component of NXP MRF6V2150NR1

RF MOSFET Transistors VHV6 150W
Stock : 0

ARF1519 electronic component of Microchip ARF1519

RF MOSFET Transistors RF MOSFET (VDMOS)
Stock : 0

MRFX1K80H-88MHZ electronic component of NXP MRFX1K80H-88MHZ

Sub-GHz Development Tools 1800W - 87.5-108MHz
Stock : 1

Additional Infomation About Product

2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF and UHFBand Power Amplifier Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. z Output Power : P 7.5W O z Power Gain : G 11.7dB P z Drain Efficiency : 50% D Absolute Maximum Ratings (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS Drain Current I 5 A D Drain Power Dissipation P 20 W D* JEDEC JEITA Channel Temperature T 150 C ch TOSHIBA 25N1A Storage Temperature Range T 45~150 C stg Weight: 0.08 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Tc = 25C When mounted on a 1.6mm glass epoxy PCB Marking 1 2007-11-01 2SK3075 Electrical Characteristics (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAXUNIT Output Power P 7.5 V = 9.6V W O DS Iidle = 50mA (V = adjust) GS Drain Efficiency 50 % D f = 520MHz, P = 500mW i Power Gain G 11.7 dB P Gate Threshold Voltage V V = 9.6V, I = 0.5mA 1.0 1.5 2.0 V th DS D Drain Cut-off Current I V = 20V, V = 0 10 A DSS DS GS Gate-Source Leakage Current I V = 10V, V = 0 5 A GSS GS DS Handling Precaution When handling individual devices, be sure that working desks, human bodies and soldering iron are protected against electrostatic electricity. RF Output Power Test Fixture 2 2007-11-01

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted