Product Information

2SK3074TE12LF

2SK3074TE12LF electronic component of Toshiba

Datasheet
RF MOSFET Transistors N-Ch Radio Freq 1A 3W 30V VDSS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7255 ea
Line Total: USD 2.73

970 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7736 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 2.7255
10 : USD 2.323
100 : USD 1.8975
250 : USD 1.748
500 : USD 1.6445
1000 : USD 1.4145
2000 : USD 1.4145
5000 : USD 1.3915
10000 : USD 1.357

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Brand Category
LoadingGif

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Additional Infomation About Product

2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHFAND UHF-BAND POWER AMPLIFIER Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. z Output Power : P 630mW O z Power Gain : G 14.9dB P z Drain Efficiency : 45% D ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS Drain Current I 1 A D Drain Power Dissipation P (Note 1) 3 W D JEDEC Channel Temperature T 150 C ch JEITA SC62 Storage Temperature Range T 45 to 150 C TOSHIBA 25K1D stg Weight: 0.05 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tc = 25C When mounted on a 1.6mm glass epoxy PCB MARKING Part No. (or abbreviation code) Note 2: A line beside a Lot No. identifies the indication of product Labels. W A Without a line: Pb /INCLUDES > MCV With a line: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental Note 2 Lot No. 1 2 3 matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic 1. Gate equipment. 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Start of commercial production Please make enough tool and equipment earthed when you handle. 1998-06 1 2014-03-01 2SK3074 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Output Power P 630 mW O V = 9.6V DS Drain Efficiency 45 Iidle = 50mA (V = adjust) % D GS f = 520MHz, P = 20mW i Power Gain G 14.9 dB P Gate Threshold Voltage V V = 9.6V, I = 0.5mA 1.4 1.9 2.4 V th DS D Drain Cut-off Current I V = 20V, V = 0 10 A DSS DS GS Gate-Source Leakage Current I V = 10V, V = 0 5 A GSS GS DS Note 3: These characteristic values are measured using measurement tools specified by Toshiba. RF OUTPUT POWER TEST FIXTURE 2 2014-03-01

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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