Product Information

2SK2615

Name: 2SK2615
Brand: Toshiba
SKU: 2SK2615_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications
Datasheet

Transistor: N-MOSFET; unipolar; 60V; 2A; 0.5W; SOT89

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.9495 ea
Line Total: USD 0.95

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 17 May to Thu. 23 May MOQ : 1 Multiples : 1 2SK2615 Toshiba	1 : USD 0.9495 5 : USD 0.3635 25 : USD 0.3108 51 : USD 0.2782 140 : USD 0.2625

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Additional Infomation About Product

The 2SK2615 is an N-channel MOS-FET (metal-oxide-semiconductor field-effect transistor) manufactured by Toshiba. It is specifically designed to be driven by a microcontroller, such as Arduino, and can be used in a wide range of low-power circuits. It features a fast switching speed, low on-resistance, and low voltage drop. The device features a current capability of up to 500 mA, making it suitable for controlling low-power motors and other loads. In addition, it has an ESD protection rating of 8kV, making it highly reliable and safe to use in a wide range of environments.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Mounting Smd Smd
Case Sot89 Sot89
Polarisation Unipolar Unipolar
Kind Of Package REEL , TAPE REEL , TAPE
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 60 V 60 V
Gate-Source Voltage 20 V 20 V
Drain Current 2 A 2 A
On-State Resistance 230 mOhms 230 mOhms
Gate Charge 6 nC 6 nC
Power Dissipation 0.5 W 0.5 W