Product Information

1SS416,L3M

Name: 1SS416,L3M
Brand: Toshiba
SKU: 1SS416L3M_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

1SS416,L3M electronic component of Toshiba

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Datasheet

Toshiba Schottky Diodes & Rectifiers SCHOTTKY DIODE 30V 100MA

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10000: USD 0.0358 ea
Line Total: USD 358

0 - Global Stock

MOQ: 10000 Multiples: 10000
Pack Size: 10000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 29 May to Tue. 04 Jun MOQ : 10000 Multiples : 10000 1SS416,L3M Toshiba	10000 : USD 0.0455

0 - WHS 2 Ships to you between Wed. 29 May to Tue. 04 Jun MOQ : 10000 Multiples : 10000 1SS416,L3M Toshiba	10000 : USD 0.0347

0 - WHS 3 Ships to you between Tue. 04 Jun to Thu. 06 Jun MOQ : 1 Multiples : 1 1SS416,L3M Toshiba	1 : USD 0.8079 10 : USD 0.6602 100 : USD 0.1462 500 : USD 0.0925 1000 : USD 0.0635 2500 : USD 0.049 10000 : USD 0.0412

0 - WHS 4 Ships to you between Wed. 29 May to Tue. 04 Jun MOQ : 401 Multiples : 401 1SS416,L3M Toshiba	401 : USD 0.0579 500 : USD 0.0472

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Additional Infomation About Product

1SS416 Schottky Barrier Diode Silicon Epitaxial 1SS4161SS4161SS4161SS416 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 2003-06 2014-07-08 1 Rev.3.01SS416 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 35 V RM Reverse voltage V 30 R Peak forward current I 200 mA FM Average rectified current I 100 mA O Power dissipation P (Note 1) 100 mW D Non-repetitive peak forward surge current I (Note 2) 1 A FSM Junction temperature T 125 j Storage temperature T -55 to 125 stg Operating temperature T -40 to 100 opr Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. Note 2: Measured with a 10 ms pulse. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.18 V F(1) F Forward voltage V I = 5 mA 0.23 V F(2) F Forward voltage V I = 100 mA 0.38 0.50 V F(3) F Reverse current I V = 10 V 20 A R(1) R Reverse current I V = 30 V 50 A R(2) R Total capacitance C V = 0 V, f = 1 MHz 15 pF t R 5. 5. 5. 5. MarkingMarkingMarkingMarking Fig. Fig. Fig. Fig. 5.15.15.15.1 MarkingMarkingMarkingMarking 2014-07-08 2 Rev.3.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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