Product Information

1SS319(TE85L,F)

1SS319(TE85L,F) electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers 0.1A 40V Switching High-Speed Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1475 ea
Line Total: USD 0.74

19501 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
19501 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 5
Multiples : 5
5 : USD 0.1519
50 : USD 0.122
150 : USD 0.1072
500 : USD 0.096
3000 : USD 0.0871
6000 : USD 0.0826

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Ifsm - Forward Surge Current
Pd - Power Dissipation
Series
Packaging
Package Case
Brand
Forward Continuous Current
Max Surge Current
Maximum Diode Capacitance
Maximum Power Dissipation
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

1SS319 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching Unit: mm Small package: SC-61 Low forward voltage: V (3) = 0.54V (typ.) F Low reverse current: I = 5 A (max) R Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 * mA FM 1. CATHODE 1 Average forward current I 100 * mA O 2. CATHODE 2 Power dissipation P 150 * mW 3. ANODE 2 Junction temperature T 125 C j 4. ANODE 1 SMQ Storage temperature T 55 to 125 C stg JEDEC JEITA SC61 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA temperature/current/voltage and the significant change in 1 3J1S temperature, etc.) may cause this product to decrease in the Weight: 13 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 F (2) F V V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 R R A Total capacitance C V = 0V , f = 1MHz 18 25 T R pF Start of commercial production 1987-06 1 2020-12-01 2020 Toshiba Electronic Devices & Storage Corporation 1SS319 Equivalent circuit (Top view) 2 1 3 4 Marking 2 1 3 4 2 2020-12-01 2020 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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