Product Information

1SS352,H3F

1SS352,H3F electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0358 ea
Line Total: USD 0.72

19283 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
97 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

1SS352,H3F
Toshiba

1 : USD 0.0423
10 : USD 0.0414
25 : USD 0.0414
100 : USD 0.0414

401580 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3000
Multiples : 3000

Stock Image

1SS352,H3F
Toshiba

3000 : USD 0.0185

19283 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 20
Multiples : 20

Stock Image

1SS352,H3F
Toshiba

20 : USD 0.0358
200 : USD 0.0282
600 : USD 0.024
3000 : USD 0.0216
9000 : USD 0.0195
21000 : USD 0.0182

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Category
LoadingGif

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Additional Infomation About Product

1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : V = 0.54V (typ.) F (3) Low reverse surrent : I = 5A (max) R Small package : SC59 Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O JEDEC TO236MOD Power dissipation P 150 mW JEITA SC59 TOSHIBA 2-3F1S Junction temperature T 125 C j Weight: 12 mg (typ.) Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 V F (2) F V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0 V, f = 1MHz 18 25 pF T R Marking Start of commercial production 1986-03 1 2017-10-19 1SS294 2 2017-10-19

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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