Product Information

1SS427,L3M

1SS427,L3M electronic component of Toshiba

Datasheet
Toshiba Diodes - General Purpose, Power, Switching 300mA SW DIODE
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

230: USD 0.0913 ea
Line Total: USD 21

3395 - Global Stock
Ships to you between
Tue. 28 May to Mon. 03 Jun
MOQ: 230  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3395 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

1SS427,L3M
Toshiba

1 : USD 0.3047
10 : USD 0.2161
25 : USD 0.2124
100 : USD 0.0913
250 : USD 0.0903
500 : USD 0.0894
1000 : USD 0.0497
3000 : USD 0.0491
6000 : USD 0.0333

5082 - WHS 2


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 5
Multiples : 5

Stock Image

1SS427,L3M
Toshiba

5 : USD 0.0963
50 : USD 0.0702
150 : USD 0.0549
500 : USD 0.0497
2500 : USD 0.0456
5000 : USD 0.0436

3395 - WHS 3


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 230
Multiples : 1

Stock Image

1SS427,L3M
Toshiba

230 : USD 0.0913
250 : USD 0.0903
500 : USD 0.0894
1000 : USD 0.0497
3000 : USD 0.0491
6000 : USD 0.0333

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

1SS427 Switching Diodes Silicon Epitaxial Planar 1SS4271SS4271SS4271SS427 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Ultra-High-Speed Switching 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 2005-12 2014-07-08 1 Rev.3.01SS427 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 85 V RM Reverse voltage V 80 R Peak forward current I 200 mA FM Average rectified current I 100 O Power dissipation P (Note 1) 150 mW D Non-repetitive peak forward surge current I (Note 2) 1 A FSM Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. Note 2: Measured with a 10 ms pulse. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.62 V F(1) F V I = 10 mA 0.75 F(2) F V I = 100 mA 0.98 1.20 F(3) F Reverse current I V = 30 V 0.1 A R(1) R I V = 80 V 0.5 R(2) R Total capacitance C V = 0 V, f = 1 MHz 0.3 pF t R Reverse recovery time t I = 10 mA 1.6 ns rr F See Fig. 5.1. Fig. Fig. Fig. Fig. 4.14.14.14.1 Reverse recovery time (tReverse recovery time (tReverse recovery time (tReverse recovery time (trrrrrrrr) Test circuit) Test circuit) Test circuit) Test circuit 2014-07-08 2 Rev.3.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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