Product Information

1SS424(TPL3,F)

1SS424(TPL3,F) electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers High-Speed 0.50V VF 30V VRM 300mA 1A
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2302 ea
Line Total: USD 0.23

11224 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
11224 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2231
10 : USD 0.1552
100 : USD 0.0644
1000 : USD 0.0414
2500 : USD 0.038
8000 : USD 0.0322
24000 : USD 0.0322
48000 : USD 0.0299

Read More Specifications

     
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Product Category
RoHS - XON
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Additional Infomation About Product

1SS424 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS424 High-Speed Switching Applications Unit: mm z Low forward voltage : V = 0.50 V (typ.) F (3) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 30 V RM Reverse voltage V 20 V R Maximum (peak) forward current I 300 mA FM Average forward current I 200 mA O Surge current (10 ms) I 1 A FSM Power dissipation P * 150 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-1G1A temperature/current/voltage and the significant change in Weight: 1.4 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass-epoxy circuit board of 20 20 mm, pad dimensions of 4 4 mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.18 F (1) F Forward voltage V I = 5 mA 0.23 F (2) F V V I = 200 mA 0.42 0.5 F (3) F Reverse current I V = 10 V 30 R (1) R A I V = 20 V 50 R (2) R Total capacitance C V = 0, f = 1 MHz 20 T R pF Equivalent Circuit (Top View) Marking S8 Start of commercial production 2004-08 2014-03-01 11SS424 IF - VF IR - VR 1 1000 1000010m Ta=100C Ta=100C 100m 1m 100 1000 25 100 100 10 10m 25 10u 10 1 1m -25 1 1u 0 -25 100u 0 100n 0 10u 0 10n 0 1u 0 1n 0 0.2 0.4 0.6 0 5 10 15 20 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) P Ta CT - VR 200 100 Mounted on a glass-epoxy circuit board of 20 20 mm, 150 pad dimensions of 4 4 mm. 10 100 50 1 0 010 20 30 0 25 50 75 100 125 150 175 REVERSE VOLTAGE VF (V) AMBIENT TEMPERATURE Ta (C) 2014-03-01 2 FORWARD CURRENT IF (A) TOTAL CAPACITANCE CT (pF) REVERSE CURRENT IR (A) COLLECTOR POWER DISSIPATION P (mW) C

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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