Product Information

STB100N6F7

STB100N6F7 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.8274 ea
Line Total: USD 827.4

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1000
Multiples : 1000

Stock Image

STB100N6F7
STMicroelectronics

1000 : USD 1.0311

0 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1000
Multiples : 1000

Stock Image

STB100N6F7
STMicroelectronics

1000 : USD 1.158
2000 : USD 1.0722
3000 : USD 1.0722
4000 : USD 1.0722
5000 : USD 1.0722

0 - Warehouse 3


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STB100N6F7
STMicroelectronics

1 : USD 1.9744
10 : USD 1.6458
30 : USD 1.4071
100 : USD 1.21
500 : USD 1.1758
1000 : USD 1.1613

0 - Warehouse 4


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

STB100N6F7
STMicroelectronics

1 : USD 4.833
10 : USD 1.7388
100 : USD 1.3608
500 : USD 1.1232
1000 : USD 0.8813
2000 : USD 0.8554

0 - Warehouse 5


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1000
Multiples : 1000

Stock Image

STB100N6F7
STMicroelectronics

1000 : USD 0.8274

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Package Type
Operating Temperature Classification
Gate-Source Voltage Max
Drain-Source On-Volt
Number Of Elements
Mounting
Operating Temp Range
Pin Count
Rad Hardened
Polarity
Type
Continuous Drain Current
Power Dissipation
Configuration
Series
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Brand Category
LoadingGif

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STB100N6F7 N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT % STB100N6F7 60 V 5.6 m 100A125 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness . Applications Switching applications Figure 1. Internal schematic diagram Description This N-channel Power MOSFET utilizes % 7 STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. * 6 0 Y Table 1. Device summary Order code Marking Package Packaging STB100N6F7 100N6F7 DPAK Tape and Reel December 2015 DocID027210 Rev 3 1/15 This is information on a product in full production. www.st.com 3 7 Contents STB100N6F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 5 Packing information 12 6 Revision history . 14 2/15 DocID027210 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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