Product Information

STB28N60DM2

STB28N60DM2 electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.5199 ea
Line Total: USD 1519.9

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1000
Multiples : 1000

Stock Image

STB28N60DM2
STMicroelectronics

1000 : USD 3.107
2000 : USD 3.0758
3000 : USD 3.0459
4000 : USD 3.0147
5000 : USD 2.9848
6000 : USD 2.9549
10000 : USD 2.925
20000 : USD 2.8964
50000 : USD 2.8665

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1000
Multiples : 1000

Stock Image

STB28N60DM2
STMicroelectronics

1000 : USD 1.5199

0 - WHS 3


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STB28N60DM2
STMicroelectronics

1 : USD 9.5363
10 : USD 3.4299
25 : USD 3.2482
100 : USD 2.8101
500 : USD 2.3934
1000 : USD 2.0942

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data TAB Features V R DS DS(on) Order code ID PTOT T max. Jmax. STB28N60DM2 2 D PAK TAB STP28N60DM2 650 V 0.16 21 A 170 W STW28N60DM2 Fast-recovery body diode 3 Extremely low gate charge and input 3 2 TO-220 2 TO-247 capacitance 1 1 Low on-resistance 100% avalanche tested Figure 1: Internal schematic diagram Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB28N60DM2 DPAK Tape and reel STP28N60DM2 28N60DM2 TO-220 Tube STW28N60DM2 TO-247 Tube April 2017 DocID027040 Rev 5 1/20 www.st.com This is information on a product in full production. Contents STB28N60DM2, STP28N60DM2, STW28N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 DPAK (TO-263) type A package information ................................. 10 4.2 TO-220 type A package information ................................................ 13 4.3 TO-247 package information ........................................................... 15 5 Packing information ...................................................................... 17 5.1 DPAK type A packing information .................................................. 17 6 Revision history ............................................................................ 19 2/20 DocID027040 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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