Product Information

STB34N50DM2AG

Name: STB34N50DM2AG
Brand: STMicroelectronics
SKU: STB34N50DM2AG_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB34N50DM2AG electronic component of STMicroelectronics

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Datasheet

MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 7.2868 ea
Line Total: USD 7.29

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 23 May to Wed. 29 May MOQ : 1000 Multiples : 1000 STB34N50DM2AG STMicroelectronics	1000 : USD 5.3678 2000 : USD 5.3141 3000 : USD 5.2618 4000 : USD 5.2081 5000 : USD 5.1572 6000 : USD 5.1049 10000 : USD 5.0539 20000 : USD 5.0029 50000 : USD 4.9533

0 - WHS 2 Ships to you between Wed. 29 May to Fri. 31 May MOQ : 1 Multiples : 1 STB34N50DM2AG STMicroelectronics	1 : USD 7.2868 10 : USD 2.6171 100 : USD 2.3092 500 : USD 2.1347 1000 : USD 1.9705 5000 : USD 1.8576 10000 : USD 1.8166

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Additional Infomation About Product

STB34N50DM2AG Automotive-grade N-channel 500 V, 0.10 typ., 26 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT TAB max. STB34N50DM2AG 500 V 0.12 26 A 190 W 3 Designed for automotive applications and 1 AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input 2 D PAK capacitance Low on-resistance 100% avalanche tested Figure 1: Internal schematic diagram Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB34N50DM2AG 34N50DM2 DPAK Tape and reel August 2015 DocID028248 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STB34N50DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-263) type A package information ................................... 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID028248 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 26 A 26 A
Vds - Drain-Source Breakdown Voltage 500 V 500 V
Rds On - Drain-Source Resistance 120 mOhms 120 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 190 W 190 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 252 - 3 TO - 252 - 3
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage +/- 30 V +/- 30 V
Qg - Gate Charge 44 nC 44 nC
Channel Mode Enhancement Enhancement
Qualification Aec - Q101 Aec - Q101
Tradename Mdmesh Mdmesh
Height 4.6 mm 4.6 mm
Length 10.4 mm 10.4 mm
Product Power Mosfet Power Mosfet
Type High Voltage High Voltage
Width 9.35 mm 9.35 mm
Brand Stmicroelectronics Stmicroelectronics
Fall Time 8.1 ns 8.1 ns
Rise Time 11.5 ns 11.5 ns
Factory Pack Quantity : 1000 1000
Typical Turn-Off Delay Time 65.5 ns 65.5 ns
Typical Turn-On Delay Time 19.5 ns 19.5 ns
Configuration Single Single
Series Stb34n50dm2ag Stb34n50dm2ag
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000