Product Information

STB24N65M2

STB24N65M2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000

Stock Image

STB24N65M2
STMicroelectronics

1000 : USD 1.1497
10000 : USD 1.1027
100000 : USD 1.0807
N/A

Obsolete
0 - WHS 2

MOQ : 1000
Multiples : 1000

Stock Image

STB24N65M2
STMicroelectronics

1000 : USD 2.2275
2000 : USD 2.0625
N/A

Obsolete
0 - WHS 3


Multiples : 1000

Stock Image

STB24N65M2
STMicroelectronics

N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

STB24N65M2
STMicroelectronics

1 : USD 7.7733
10 : USD 2.8208
25 : USD 2.7033
100 : USD 2.3934
500 : USD 2.0515
1000 : USD 1.8378
N/A

Obsolete
0 - WHS 5

MOQ : 5
Multiples : 5

Stock Image

STB24N65M2
STMicroelectronics

5 : USD 1.6944
N/A

Obsolete
0 - WHS 6

MOQ : 1000
Multiples : 1000

Stock Image

STB24N65M2
STMicroelectronics

1000 : USD 1.4152
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I DS DS(on) D STB24N65M2 STF24N65M2 650 V 0.23 16 A STP24N65M2 Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order codes Marking Package Packaging Tape and 2 STB24N65M2 D PAK reel 24N65M2 STF24N65M2 TO-220FP Tube STP24N65M2 TO-220 November 2014 DocID026475 Rev 2 1/20 www.st.com This is information on a product in full production. Contents STB24N65M2, STF24N65M2, STP24N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 D2PAK package information ........................................................... 10 4.2 TO-220FP package information ...................................................... 13 4.3 TO-220 type A package information ................................................ 15 5 Packaging mechanical data .......................................................... 17 6 Revision history ............................................................................ 19 2/20 DocID026475 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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