Product Information

BU9844GUL-WE2

BU9844GUL-WE2 electronic component of ROHM

Datasheet
EEPROM EEPROM Serial-2Wire 16Kb

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.8463 ea
Line Total: USD 2538.9

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.7583
6000 : USD 0.7409
9000 : USD 0.7164
24000 : USD 0.7002

     
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Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BU9844GUL-W (16Kbit) General Description 2 BU9844GUL-W series is a serial EEPROM of I C BUS interface method. 1.7V single power source action and actions available at 400kHz. Features Package W(Typ.) x D(Typ.) x H(Max.) 2 Completely Conforming to the World Standard I C BUS. All Controls VCSP50L1:1.60mm x 1.84mm x 0.6mm Available by 2 Ports of Serial Clock (SCL) and Serial Data(SDA) Other Devices than EEPROM can be Connected to the Same Port, Saving Microcontroller Port. Actions Available at 400kHz Clock (1.7V to 5.5V) 1.7V to 5.5V Single Power Source Action Most Suitable for Battery Use. Up to 16Byte in Page Write Mode. Bit Format 20488 Auto Erase and Auto End Function at Data Rewrite. Low Current Consumption At Write Action (5V) : 1.2mA (Typ.) At Read Action (5V) : 0.2mA (Typ.) At Standby Action (5V) : 0.1A (Typ.) Write Mistake Prevention Function Write (write protect) Function Added. Write Mistake Prevention Function at Low Voltage. Data Rewrite up to 1,000,000 Times. Data Kept for 40 Years. Noise Filter Built in SCL / SDA Terminal Shipment Data all Address FFh. Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100470-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/26 17.Sep.2013 Rev.002 TSZ2211114001 DatasheetDatasheet BU9844GUL-W (16Kbit) Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Impressed Voltage V -0.3 to +6.5 V CC When using at Ta=25C or higher, 2.2mW to be reduced per 1C Permissible Dissipation Pd 0.22 W Storage Temperature Range Tstg -65 to +125 C Operating Temperature Range Topr -40 to +85 C Terminal voltage - -0.3 to Vcc+1.0 V Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Ta=25C, Vcc=1.7V to 5.5V) Limits Parameter Unit Min Typ. Max (Note1) Number of Data rewrite times 1,000,000 - - Times (Note) Data hold years 40 - - Years (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power Source Voltage Vcc 1.7 to 5.5 V Input Voltage Vin 0 to V CC Electrical Characteristics (Unless otherwise specified, Ta=-40C to +85C, V =1.7V to 5.5V) CC Limits Parameter Symbol Unit Conditions Min. Typ. Max. HIGH Input Voltage1 V 0.7V - - V 2.5VV 5.5V IH1 CC CC LOW Input Voltage1 V - - 0.3V V 2.5V V 5.5V IL1 CC CC HIGH Input Voltage2 V 0.9V - - V 1.7V V 2.5V IH2 CC CC LOW Input Voltage2 V - - 0.1V V 1.7V V 2.5V IL2 CC CC LOW Output Voltage1 V - - 0.3 V I =3.0mA, 2.5VV 5.5V, (SDA) OL1 OL CC LOW Output Voltage2 V - - 0.2 V I =1.5mA, 1.7VV 2.5V, (SDA) OL2 OL CC Input Leak Current I -1 - 1 A V =0V to V LI IN CC Output Leak Current I -1 - 1 A V =0V to V (SDA) LO OUT CC V =5.5V, f =400kHz, t =5ms, CC SCL WR I - - 2.0 mA CC1 Byte write, Page write Current Consumption V =5.5V, f =400kHz CC SCL at Action I - - 0.5 mA Random read, Current read, CC2 sequential read V =5.5V, SDASCL=V , CC CC Standby Current I - - 2.0 A SB A2=GND, WP=GND www.rohm.com TSZ02201-0R2R0G100470-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/26 TSZ2211115001 17.Sep.2013 Rev.002

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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