Product Information

BU9882FV-WE2

BU9882FV-WE2 electronic component of ROHM

Datasheet
EEPROM 2K BIT 128 X 8 X 2 3.3V5V 14PIN

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.6194 ea
Line Total: USD 2.62

2424 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2424 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 2.3018
10 : USD 2.1001
100 : USD 1.8628
500 : USD 1.8391
1000 : USD 1.7798
2500 : USD 1.6136
5000 : USD 1.6018
10000 : USD 1.5424
25000 : USD 1.5424

     
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Datasheet Standard EEPROMs Plug & Play EEPROMs (for Display) BU9882xx-W Series (1K2BANK) General Description TM BU9882F-W,BU9882FV-W are dual port EEPROMs compatible with the DDC2 . 2 independent ports allow 2 EDID channels to be read simultaneously. Features Packages W(Typ.) x D(Typ.) x H(Max.) TM Designed for use with DDC2 2-port simultaneous read function Operating voltage range: 2.5V-5.5V Page write function: 8bytes Low power consumption Active (at 5V) : 1.5mA (typ) Stand-by (at 5V) : 0.1A (typ) Data security SSOP-B14 SOP14 Write protection with WP 8.70mm x 6.20mm x 1.71mm 5.00mm x 6.40mm x 1.35mm Write protection at low power supply voltage Initial data=FFh Data retention: 10years Rewriting possible up to 100,000 times BU9882xx-W series Capacity Type Power source Voltage SOP14 SSOP-B14 2Kbit BU9882 2.5V to 5.5V Absolute Maximum Ratings Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC Reduce by 4.5 mW/C over 25 C. 0.45 (SOP14) Power Dissipation Pd W 0.35 (SSOP-B14) Reduce by 3.5 mW/C over 25 C Storage Temperature Tstg -65 to +125 Operating Temperature Topr -40 to +85 Terminal Voltage -0.3 to Vcc+1.0 *1 V *1 6.8V (Max.) Memory cell characteristics Limits Parameter Unit Min. Typ. Max Write/Erase Cycle 100,000 Times Data Retention 10 Years Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays .w ww.rohm.com TSZ02201-0R2R0G100300-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/18 TSZ2211114001 21.Aug.2015 Rev.002 BU9882xx-W Series (1K2BANK) Recommended Operating Ratings Parameter Symbol Ratings Unit Supply Voltage VCC 2.5 to 5.5 V Input voltage 0 to Vcc+1.0 VIN Electrical characteristics - DC (Unless otherwise specified, Ta=-40 to +85 VCC=2.5V to 5.5V) Limits Parameter Symbol Unit Condition Min. Typ. Max. H Input Voltage 1 VIH1 2.0 - - V L Input Voltage 1 VIL1 - - 0.8 V VCC 4.0V L Input Voltage 2 VIL2 - - 0.2VCC V VCC 4.0V L output Voltage VOL1 - - 0.4 V SDA PC0/1, IOL=3.0mA * SCL PC0/1,DDCENA, BANKSEL, Input Leakage Current 1 ILI1 -1 - 1 A VIN=0V to VCC+1.0 Input Leakage Current 2 ILI2 -1 - 50 A WP SDA PC0/1,SCL/SDA MON(DDCENA=GND), Output Leakage Current ILO -1 - 1 A VOUT=0V to VCC+1.0 fSCL=400kHz, VCC=5.5V Operating Current ICC - 1.5 3.0 mA tWR=10ms SCL/SDA PC0/1=VCC SCL/SDA MON=H-Z Standby Current ISB - 0.1 5 A DDCENA=WP=BANKSEL=GND DUALPCB=VCC *1 IOL at monitor mode (DDCENA HIGH) is the sum of current flowing from the pull up resistor at the SDA MON side to the pull up resistance at SDA PC0/PC1 - AC (Unless otherwise specified, Ta=-40 to +85,VCC=2.5V to 5.5V) Fast-mode Standard-mode Unit Parameter Symbol VCC=2.5V to 5.5V VCC=2.5V to 5.5V Typ. Min. Typ. Max. Min. Typ. Max. Clock Frequency fSCL - - 400 - - 100 kHz Data Clock High Period tHIGH 0.6 - - 4.0 - - s Data Clock Low Period tLOW 1.3 - - 4.7 - - s SDA and SCL Rise Time tR - - 0.3 - - 1.0 s SDA and SCL Fall Time tF - - 0.3 - - 0.3 s Start Condition Hold Time tHD:STA 0.6 - - 4.0 - - s Start Condition Setup Time tSU:STA 0.6 - - 4.7 - - s Input Data Hold Time tHD:DAT 0 - - 0 - - ns Input Data Setup Time tSU:DAT 100 - - 250 - - ns Output Data Delay Time(SCL) tPD - - 0.9 - - 3.5 s Stop Condition Setup Time tSU:STO 0.6 - - 4.0 - - s Bus Free Time tBUF 1.3 - - 4.7 - - s Write Cycle Time tWR - - 10 - - 10 ms Noise Spike Width (SDA and SCL) tI - - 0.1 - - 0.1 s www.rohm.com TSZ02201-0R2R0G100300-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/18 TSZ2211115001 21.Aug.2015 Rev.002

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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