Product Information

BU9889GUL-WE2

BU9889GUL-WE2 electronic component of ROHM

Datasheet
ROHM Semiconductor EEPROM EEPROM Serial-2Wire 8Kb

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7128 ea
Line Total: USD 0.71

6693 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3156 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5968
10 : USD 0.5428
100 : USD 0.4899
500 : USD 0.4865
1000 : USD 0.4681
3000 : USD 0.4577
6000 : USD 0.4324
9000 : USD 0.422
24000 : USD 0.4117

     
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Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BU9889GUL-W (8Kbit) General Description 2 BU9889GUL-W is a serial EEPROM of I C BUS interface method. Features Package W(Typ.) x D(Typ.) x H(Max.) 2 Completely conforming to the world standard I C BUS. VCSP50L1 1.60mm x 1.00mm x 0.55mm All controls available by 2 ports of serial clock (SCL) and serial data (SDA) 1k words8 bits architecture 8kbit serial EEPROM. Other devices than EEPROM can be connected to the same port, saving microcontroller port. 1.7V to 5.5V single power source action most suitable for battery use. FAST MODE 400kHz at 1.7V to 5.5V Page write mode useful for initial value write at factory shipment. Auto erase and auto end function at data rewrite. Low current consumption At write operation (5V) : 0.5mA (Typ.) At read operation (5V) : 0.2mA (Typ.) At standby operation (5V) : 0.1A (Typ.) Write mistake prevention function Write (write protect) function added Write mistake prevention function at low voltage Data rewrite up to 100,000 times Data kept for 40 years Noise filter built in SCL / SDA terminal Shipment data all address FFh Absolute Maximum Ratings (Ta=25) Parameter symbol Limits Unit Remarks Impressed voltage V -0.3 to +6.5 V CC When using at Ta=25 or higher, 2.2mW to be reduced per 1 Permissible dissipation Pd 220 mW Storage temperature range Tstg -65 to +125 Action temperature range Topr -40 to +85 Terminal voltage - -0.3 to V+1.0 V CC Memory cell characteristics (Ta=25, Vcc=1.7V to 5.5V) Limits Parameter Unit Min. Typ. Max. Number of data rewrite times *1 100,000 - - Times Data hold years *1 40 - - Years Shipment data all address FFh *1 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Power source voltage V 1.7 to 5.5 CC V Input voltage V 0 to V IN CC Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www .rohm.com TSZ02201-0R2R0G100490-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/23 TSZ2211114001 05.SEP.2012 Rev.001DatasheetDatasheet BU9889GUL-W (8Kbit) Electrical Characteristics (Unless otherwise specified Ta=-40 to +85, Vcc=1.7V to 5.5V) Limits Parameter Symbol Unit Condition Min Typ. Max. Input Voltage1 VIH1 0.7V - V +1.0 V CC CC Input Voltage1 VIL1 -0.3 - 0.3V V CC Output Voltage1 VOL1 - - 0.4 V IOL=3.0mA , 2.5VV 5.5V (SDA) CC Output Voltage2 VOL2 - - 0.2 V IOL=0.7mA , 1.7VV 2.5V (SDA) CC Input Leakage Current ILI -1 - 1 AVIN=0 to V CC Output Leakage Current ILO -1 - 1 AVOUT=0 to V (SDA) CC V =5.5V, fSCL =400kHz, tWR=5ms CC ICC1 - - 2.0 mA Byte Write, Page Write Current consumption at action V =5.5V, fSCL =400kHz CC ICC2 - - 0.5 mA Random read, Current read, Sequential read V =5.5V, SDASCL=V CC CC Standby Current ISB - - 2.0 A A2=GND, WP=GND Action timing characteristics (Unless otherwise specified Ta=-40 to +85, Vcc=1.7V to 5.5V) Limits Parameter Symbol Unit Min. Typ. Max. SCL Frequency fSCL - - 400 kHz Data clockHig time tHIGH 0.6 - - s Data clockLo time tLOW 1.2 - - s SDA, SCL rise time *1 tR - - 0.3 s SDA, SCL fall time *1 tF - - 0.3 s Start condition hold time tHD:STA 0.6 - - s Start condition setup time tSU:STA 0.6 - - s Input data hold time tHD:DAT 0 - - ns Input data setup time tSU:DAT 100 - - ns Output data delay time tPD 0.1 - 0.9 s Output data hold time tDH 0.1 - - s Stop condition data setup time tSU:STO 0.6 - - s Bus release time before transfer start tBUF 1.2 - - s Internal write cycle time tWR - - 5 ms Noise removal valid period (SDA,SCL terminal) tI - - 0.1 s WP hold time tHD:WP 0 - - ns WP setup time tSU:WP 0.1 - - s WP valid time tHIGH:WP 1.0 - - s *1 : Not 100% TESTED www.rohm.com TSZ02201-0R2R0G100490-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/23 TSZ2211115001 05.SEP.2012 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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