Product Information

BR93H76RF-2LBH2

BR93H76RF-2LBH2 electronic component of ROHM

Datasheet
EEPROM Microwire BUS 8Kbit(512x16bit)

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3709 ea
Line Total: USD 1.37

144 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
144 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.2075
10 : USD 1.0925
100 : USD 0.9902
500 : USD 0.9373
1000 : USD 0.9062
2500 : USD 0.8855
5000 : USD 0.8671
10000 : USD 0.8061
25000 : USD 0.8061

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Data Retention
Supply Current - Max
Packaging
Brand
Operating Supply Current
Operating Supply Voltage
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Datasheet Serial EEPROM Series Industrial EEPROM 125 Operation Microwire BUS EEPROM (3-wire) BR93H76RF-2LB General Description Package W(Typ.) x D(Typ.) x H(Max.) This is the product guarantees long time support in Industrial market. BR93H76RF-2LB is a serial EEPROM of serial 3-line interface method. Features Long Time Support a Product for Industrial Applications. Conforming to Microwire BUS SOP8 Withstands Electrostatic Voltage up to 6kV 5.00mm x 6.20mm x 1.71mm (HBM method typ Wide Temperature Range -40 to +125 Same package line-up and same pin configuration 2.5V to 5.5V Single Supply Voltage Operation Application Address Auto Increment Function at READ Industrial Equipment Operation Prevention of write mistake Write prohibition at power on Write prohibition by command code Write mistake prevention circuit at low voltage Self-timed programming cycle Program Condition Display by READY / BUSY Low Supply Current Write Operation (5V) : 0.8mA (Typ) Read Operation (5V) : 0.5mA (Typ) Standby Operation (5V) : 0.1A (Typ) Compact package High-Reliability using ROHM Original Double-Cell structure More than 100 years data retention More than 1 million write cycles Data set to FFFFh on all addresses at shipment BR93H76RF-2LB Product Name Capacity Bit Format Supply Voltage Package 8Kbit 51216 BR93H76RF-2LB 2.5V to 5.5V SOP8 Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100280-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/25 27.Feb.2014 Rev.002 TSZ2211114001 DatasheetDatasheet BR93H76RF-2LB Absolute Maximum Ratings (Ta=25) Parameter Symbol Limit Unit Remarks Supply Voltage V -0.3 to +6.5 V CC When using at Ta=25 or higher 4.5mW to be reduced per 1. Permissible Dissipation Pd 0.56 W Storage Temperature Range Tstg -65 to +150 Operating Temperature Range Topr -40 to +125 Input Voltage/Output Voltage -0.3 to V+0.3V CC Memory Cell Characteristics (V =2.5V to 5.5V) CC Limit Parameter Unit Conditions Min Typ Max 1,000,000 - - Cycles Ta85 (1) Write Cycles 500,000 - - Cycles Ta105 300,000 - - Cycles Ta125 100 - - Years Ta25 (1) Data Retention 60 - - Years Ta105 50 - - Years Ta125 (1) Not 100% TESTED Recommended Operating Conditions Parameter Symbol Limit Unit Supply Voltage V 2.5 to 5.5 CC V Input Voltage V 0 to V IN CC www.rohm.com TSZ02201-0R1R0G100280-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/25 27.Feb.2014 Rev.002 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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