Product Information

NID6002NT4G

NID6002NT4G electronic component of ON Semiconductor

Datasheet
ON Semiconductor MOSFET NFET 60V HD
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 1

Stock Image

NID6002NT4G
ON Semiconductor

2500 : USD 0.839
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

NID6002NT4G
ON Semiconductor

1 : USD 1.3871
10 : USD 1.1726
100 : USD 0.9009
500 : USD 0.8008
1000 : USD 0.679
2500 : USD 0.6466
10000 : USD 0.6379
25000 : USD 0.6168
50000 : USD 0.5981
N/A

Obsolete
0 - WHS 3

MOQ : 20
Multiples : 1

Stock Image

NID6002NT4G
ON Semiconductor

20 : USD 1.7915
50 : USD 1.3032
100 : USD 1.1539
200 : USD 1.0782
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

NID6002N Preferred Device SelfProtected FET with Temperature and Current Limit 65 V, 6.5 A, Single NChannel, DPAK NID6002N MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 70 Vdc DSS GatetoSource Voltage V 14 Vdc GS Drain Current Continuous I Internally Limited D Total Power Dissipation P W D T = 25C (Note 1) 1.3 A T = 25C (Note 2) 2.5 A Thermal Resistance C/W JunctiontoCase R 3.0 JC JunctiontoAmbient (Note 1) R 95 JA JunctiontoAmbient (Note 2) R 50 JA Single Pulse DraintoSource Avalanche Energy E 143 mJ AS (V = 50 Vdc, V = 5.0 Vdc, DD GS I = 1.3 Apk, L = 160 mH, R = 25 ) (Note 3) L G Operating and Storage Temperature Range T , T 55 to 150 C J stg (Note 4) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (700 sq/mm) FR4 PCB, 1 oz cu. 3. Not subject to production test. 4. Normal prefault operating range. See thermal limit range conditions.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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