Product Information

NIF62514T1G

NIF62514T1G electronic component of ON Semiconductor

Datasheet
MOSFET N-CH HD+ 6A 40V SOT223 ELECTRONICS PART
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.291 ea
Line Total: USD 5.29

67 - Global Stock
Ships to you by
Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
67 - WHS 1


Ships to you by Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

NIF62514T1G
ON Semiconductor

1 : USD 5.291
10 : USD 2.6455
25 : USD 2.3809
50 : USD 1.9841
75 : USD 1.7857

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

NIF62514 Self-Protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to NIF62514 MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 40 Vdc DSS DraintoGate Voltage Internally Clamped (R = 1.0 M ) V 40 Vdc GS DGR GatetoSource Voltage V 16 Vdc GS Drain Current Continuous T = 25C I A D Internally Limited Continuous T = 100C I A D Pulsed (t 10 s) I p DM Total Power Dissipation P W D T = 25C (Note 1) 1.1 A T = 25C (Note 2) 1.73 A T = 25C (Note 3) 8.93 A Thermal Resistance, C/W Junction toTab R 14 JT JunctiontoAmbient (Note 1) R 114 JA JunctiontoAmbient (Note 2) R 72.3 JA Single Pulse DraintoSource Avalanche Energy E 300 mJ AS (V = 25 Vdc, V = 5.0 Vdc, V = 40 Vdc, I = 2.8 Apk, L = 80 mH, R = 25 ) DD GS DS L G Operating and Storage Temperature Range T , T 55 to 150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto min pad board. 2. Mounted onto 1 pad board. 3. Mounted onto large heatsink. + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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