Product Information

RTQ040P02TR

RTQ040P02TR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET P-CH 20V 4A TSMT6
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5879 ea
Line Total: USD 1.59

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.5708

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May


Multiples : 1

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.3645
6000 : USD 0.3375
9000 : USD 0.3375
12000 : USD 0.3375
15000 : USD 0.3375

0 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.248

0 - WHS 5


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2764
6000 : USD 0.2694
9000 : USD 0.2599
24000 : USD 0.2575

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

RTQ040P02 Transistors DC-DC Converter (20V, 4.0A) RTQ040P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (110m at 2.5V) TSMT6 2.8 2) High power package. 1.6 3) High speed switching. 4) Low voltage drive. (2.5V) (1) Drain Applications (2) Drain DC-DC converter (3) Gate Each lead has same dimensions (4) Source (5) Drain (6) Drain Abbreviated symbol : TZ Equivalent circuit Structure Silicon P-channel (6) (5) (4) MOS FET 2 Packaging specifications 1 Package Taping Type Code TR (1) Drain Basic ordering unit (pieces) 3000 (2) Drain (3) Gate (1) (2) (3) RTQ040P02 (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE 1/4 0.4 0.16 (3) (2) (1) (5) (4) (6) 0.85 2.9RTQ040P02 Transistors Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 12 V Continuous I 4.0 A D Drain current 1 I 16 A Pulsed DP 1 Source current Continuous IS 1 A (Body diode) Pulsed ISP 16 A 2 Total power dissipation P 1.25 W D Tch 150 C Channel temperature Range of Storage temperature Tstg 55 to +150 C 1 Pw10 s, Duty cycle1% 2 Mounted on a ceramic board Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 20 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 20V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.7 2.0 V VDS= 10V, ID= 1mA 35 50 m ID= 4A, VGS= 4.5V Static drain-source on-state R 40 55 m I = 4A, V = 4V DS (on) D GS resistance 60 85 m ID= 2.0A, VGS= 2.5V Forward transfer admittance Yfs 3.5 SVDS= 10V, ID= 2.0A Input capacitance C 1350 pF V = 10V iss DS Output capacitance C 210 pF V =0V oss GS Reverse transfer capacitance Crss 150 pF f=1MHz Turn-on delay time td (on) 15 ns ID= 2.0A VDD 15V Rise time tr 35 ns VGS= 4.5V Turn-off delay time td (off) 60 ns RL=7.5 Fall time tf 30 ns RGS=10 Total gate charge Q 12.2 nC V 15V RL 3.75 g DD Gate-source charge Qgs 2.6 nC VGS= 4.5V RGS=10 Gate-drain charge Qgd3.4 nC ID= 4.0A Pulsed Body diode characteristics (source-drain characteristics) Forward voltage VSD 1.2 V IS= 1A, VGS=0V 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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