Product Information

DN3525N8-G

DN3525N8-G electronic component of Microchip

Datasheet
Transistor: N-MOSFET; unipolar; 250V; 0.3A; 1.6W; SOT89-3

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.012 ea
Line Total: USD 1.01

135039 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9700 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2000
Multiples : 2000

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DN3525N8-G
Microchip

2000 : USD 0.7925
4000 : USD 0.7888
6000 : USD 0.785
8000 : USD 0.7813
10000 : USD 0.7775
16000 : USD 0.7725
26000 : USD 0.7687

1940 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2000
Multiples : 2000

Stock Image

DN3525N8-G
Microchip

2000 : USD 0.8195

9700 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2000
Multiples : 2000

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DN3525N8-G
Microchip

2000 : USD 0.88

7563 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

DN3525N8-G
Microchip

1 : USD 0.9581
10 : USD 0.9545
25 : USD 0.9507
100 : USD 0.947
250 : USD 0.9432
500 : USD 0.9395
1000 : USD 0.9207
3000 : USD 0.9207
6000 : USD 0.9207

1940 - WHS 5


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2000
Multiples : 2000

Stock Image

DN3525N8-G
Microchip

2000 : USD 0.9719

135039 - WHS 6


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

DN3525N8-G
Microchip

1 : USD 1.012
25 : USD 0.8395
100 : USD 0.7475

7563 - WHS 7


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 8
Multiples : 1

Stock Image

DN3525N8-G
Microchip

8 : USD 0.9581
10 : USD 0.9545
25 : USD 0.9507
100 : USD 0.947
250 : USD 0.9432
500 : USD 0.9395
1000 : USD 0.9207

9700 - WHS 8


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2000
Multiples : 2000

Stock Image

DN3525N8-G
Microchip

2000 : USD 1.0219

1940 - WHS 9


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2000
Multiples : 2000

Stock Image

DN3525N8-G
Microchip

2000 : USD 0.8195

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN3525 is a low threshold depletion-mode High input impedance (normally-on) transistor utilizing an advanced vertical Low input capacitance DMOS structure and Supertexs well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device Low on-resistance with the power handling capabilities of bipolar transistors Free from secondary breakdown and with the high input impedance and positive temperature Low input and output leakage coefcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Normally-on switches wide range of switching and amplifying applications where Solid state relays high breakdown voltage, high input impedance, low input Converters capacitance, and fast switching speeds are desired. Constant current sources Power supply circuits Telecom Ordering Information Package Option R I DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-243AA (SOT-89) () (mA) DN3525 DN3525N8-G 250 6.0 300 -G indicates package is RoHS compliant (Green) Absolute Maximum Ratings Pin Conguration Parameter Value DRAIN Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX SOURCE DRAIN Gate-to-source voltage 20V GATE Operating and storage O O TO-243AA (SOT-89) (N8) -55 C to +150 C temperature O Soldering temperature* 300 C Product Marking Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous W = Code for week sealed operation of the device at the absolute rating level may affect device reliability. All D N 5 C W voltages are referenced to device ground. = Green Packaging Package may or may not include the following marks: Si or * Distance of 1.6mm from case for 10 seconds. TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN3525 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-243AA 360 1.0 1.6 15 78 360 1.0 Notes: I (continuous) is limited by max rated T . D J Mounted on FR5 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Symbol Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 250 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 15V, I = 1.0mA GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 15V, I = 1.0mA GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 A V = Max rating, V = -5.0V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -5.0V, T = 125 C GS A I Saturated drain-to-source current 300 - - mA V = 0V, V = 15V DSS GS DS Static drain-to-source on-state R - - 6.0 V = 0V, I = 200mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 200mA DS(ON) DS(ON) GS D G Forward transconductance 225 - - mmho V = 10V, I = 150mA FS DS D C Input capacitance - 270 350 ISS V = -5.0V, GS C Common source output capacitance - 20 60 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 5.0 20 RSS t Turn-on delay time - - 20 d(ON) V = 25V, DD t Rise time - - 25 I = 150mA, r D ns R = 25, t Turn-off delay time - - 25 GEN d(OFF) V = 0V to -10V GS t Fall time - - 40 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 150mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 150mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R INPUT L PULS E GENERATOR 10% -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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