Product Information

DN2530N8-G

Hot DN2530N8-G electronic component of Microchip

Datasheet
Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6804 ea
Line Total: USD 0.68

1 - Global Stock
Ships to you by
Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7760 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 2000
Multiples : 2000

Stock Image

DN2530N8-G
Microchip

2000 : USD 0.7925
4000 : USD 0.7888
6000 : USD 0.785
8000 : USD 0.7813
10000 : USD 0.7775
16000 : USD 0.7725
26000 : USD 0.7687

1526 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

DN2530N8-G
Microchip

1 : USD 0.9154
25 : USD 0.7808
100 : USD 0.7326

363 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

DN2530N8-G
Microchip

1 : USD 1.131
5 : USD 1.105
18 : USD 0.949
25 : USD 0.897
100 : USD 0.871

7760 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 2000
Multiples : 2000

Stock Image

DN2530N8-G
Microchip

2000 : USD 1.0627

1455 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 9
Multiples : 1

Stock Image

DN2530N8-G
Microchip

9 : USD 1.05
10 : USD 1.0113
25 : USD 0.9724
100 : USD 0.9335
250 : USD 0.9148

363 - WHS 6


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 76
Multiples : 1

Stock Image

DN2530N8-G
Microchip

76 : USD 1.3138

1 - WHS 7


Ships to you by Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

DN2530N8-G
Microchip

1 : USD 0.6804
100 : USD 0.5613
500 : USD 0.5191
1000 : USD 0.5021

     
Manufacturer
Product Category
Case
Mounting
Kind Of Channel
Polarisation
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Gate-Source Voltage
Pulsed Drain Current
Power Dissipation
Brand Category
LoadingGif

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DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode (normally-on) High input impedance transistor utilizing an advanced vertical DMOS structure and Low input capacitance Supertexs well-proven silicon-gate manufacturing process. Fast switching speeds This combination produces a device with the power handling Low on-resistance capabilities of bipolar transistors and with the high input Free from secondary breakdown impedance and positive temperature coefcient inherent Low input and output leakage in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Normally-on switches wide range of switching and amplifying applications where Solid state relays high breakdown voltage, high input impedance, low input Converters capacitance, and fast switching speeds are desired. Linear ampliers Constant current sources Power supply circuits Telecom Ordering Information R I Package Options DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-243AA(SOT-89) TO-92 () (mA) DN2530 DN2530N8-G DN2530N3-G 300 12 200 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN SOURCE SOURCE DRAIN DRAIN Absolute Maximum Ratings GATE GATE Parameter Value TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX Product Marking Gate-to-source voltage 20V D N YY = Year Sealed Operating and storage O O -55 C to +150 C 2 5 3 0 WW = Week Sealed temperature = Green Packaging Y Y W W O Soldering temperature* 300 C TO-92 (N3) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous W = Code for week sealed operation of the device at the absolute rating level may affect device reliability. All D N 5 T W voltages are referenced to device ground. = Green Packaging TO-243AA (SOT-89) (N8) * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN2530 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM Package O (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-243AA 200 500 1.6 15 78 200 500 TO-92 175 500 0.74 125 170 175 500 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 300 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.0 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = Max rating, V = -10V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -10V, T = 125 C GS A I Saturated drain-to-source current 200 - - mA V = 0V, V = 25V DSS GS DS Static drain-to-source on-state R - - 12 V = 0V, I = 150mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transconductance 300 - - mmho V = 10V, I = 150mA FS DS D C Input capacitance - - 300 ISS V = -10V, GS C Common source output capacitance - - 30 pF V = 25V, OSS DS f = 1MHz C Reverse transfer capacitance - - 5 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 15 r ns I = 150mA, D t Turn-off delay time - - 15 d(OFF) R = 25, GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = -10V, I = 150mA SD GS SD t Reverse recovery time - 600 - ns V = -10V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R INPUT L PULS E GENERATOR 10% -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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