Green DMTH4004SPSQ 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature I D BV R Max Qg Typ DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable 40V 68.6nC 100A 2.7m VGS = 10V and Robust End Application Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses g Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: PowerDI 5060-8 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic, Green Molding Compound. automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Engine Management Systems Solderable per MIL-STD-202, Method 208 Body Control Electronics Weight: 0.097 grams (Approximate) DC-DC Converters PowerDI5060-8 S D Pin1 S D D S G D Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMTH4004SPSQ-13 PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH4004SPSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 31 A Continuous Drain Current (Note 6) I A D 26 T = +70C A 100 T = +25C C Continuous Drain Current (Note 7) A I T = +100C D C 100 (Note 9) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 350 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 100 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 350 A SM 45 Avalanche Current, L=0.2mH I A AS Avalanche Energy, L=0.2mH 200 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T = +25C P 3.6 W A D Thermal Resistance, Junction to Ambient (Note 6) R 41 C/W JA Total Power Dissipation (Note 7) T = +25C P 167 W C D Thermal Resistance, Junction to Case (Note 7) R 0.9 C/W JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 2.3 2.7 m R V = 10V, I = 90A DS(ON) GS D Diode Forward Voltage 0.9 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 4,305 C iss V = 25V, V = 0V, DS GS Output Capacitance 1,441 pF C oss f = 1MHz 102 Reverse Transfer Capacitance C rss 0.77 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 68.6 Total Gate Charge Q g V = 20V, I = 90A, DD D 16.8 Gate-Source Charge Q nC gs V = 10V GS 14.2 Gate-Drain Charge Q gd 9.5 Turn-On Delay Time t D(ON) Turn-On Rise Time 6.7 t V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time 26.4 I = 90A, R = 3.5 t D G D(OFF) Turn-Off Fall Time 8.1 t F Body Diode Reverse Recovery Time 52.4 ns t RR I = 50A, di/dt = 100A/s F 78.2 Body Diode Reverse Recovery Charge Q nC RR Notes: 6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady state. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMTH4004SPSQ April 2017 Diodes Incorporated www.diodes.com Document number: DS37562 Rev. 4 - 2