Product Information

SFT1443-TL-H

SFT1443-TL-H electronic component of ON Semiconductor

Datasheet
ON Semiconductor MOSFET NCH 4V DRIVE SERIES

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2100
Multiples : 2100

Stock Image

SFT1443-TL-H
ON Semiconductor

2100 : USD 0.3935
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

SFT1443-TL-H
ON Semiconductor

1 : USD 0.956
10 : USD 0.8384
100 : USD 0.643
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

SFT1443-TL-H
ON Semiconductor

1 : USD 0.6921
10 : USD 0.5756
100 : USD 0.3718
700 : USD 0.2967
1400 : USD 0.2846
4900 : USD 0.2846
9800 : USD 0.2835
24500 : USD 0.2661
49700 : USD 0.2618
N/A

Obsolete
0 - WHS 4

MOQ : 51
Multiples : 1

Stock Image

SFT1443-TL-H
ON Semiconductor

51 : USD 0.5458
100 : USD 0.476
500 : USD 0.3924
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Ordering number : ENA1896B SFT1443 Power MOSFET SFT1443 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.5 2.6V GS DS D Forward Transconductance g V =10V, I=4.5A 4 S FS DS D R(on)1 I =3A, V=10V 180 225m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1.5A, V=4.5V 195 275m DS D GS R(on)3 I =1.5A, V=4V 205 290m DS D GS Input Capacitance Ciss 490 pF Output Capacitance Coss V =20V, f=1MHz 34 pF DS Reverse Transfer Capacitance Crss 19 pF Turn-ON Delay Time t (on) 8 ns d Rise Time t 10 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 34 ns d Fall Time t 24 ns f Total Gate Charge Qg 9.8 nC Gate to Source Charge Qgs V =50V, V =10V, I =9A 1.8 nC DS GS D Gate to Drain Miller Charge Qgd 1.6 nC Forward Diode Voltage V I =9A, V=0V 1.03 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =50V DD IN 10V 0V I =4.5A D V IN R =11.1 L D V OUT PW=10s D.C.1% G SFT1443 P.G 50 S No.A1896-2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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