IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHD Description Using novel field stop IGBT technology, ON Semiconductors new rd series of field stop 3 generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. C Features Maximum Junction Temperature: T = 175C J Positive Temperature Coefficient for Easy Parallel Operating G High Current Capability Low Saturation Voltage: V = 1.6 V (Typ.) I = 75 A CE(sat) C E 100% of the Parts Tested for I (Note 1) LM High Input Impedance E C GG Fast Switching Tighten Parameter Distribution This Device is PbFree and is RoHS Compliant Applications TO2473LD Solar Inverter, UPS, Welder, PFC, Telecom, ESS, PFC CASE 340CH MARKING DIAGRAM Y&Z&3&K FGH75T65 SHD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65SHD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2020 Rev. 4 FGH75T65SHD/DFGH75T65SHD ABSOLUTE MAXIMUM RATINGS Description Symbol FGH75T65SHDF155 Unit Collector to Emitter Voltage V 650 V CES Gate to Emitter Voltage V 20 V GES Transient Gate to Emitter Voltage 30 V Collector Current T = 25C I 150 A C C Collector Current T = 100C 75 A C Pulsed Collector Current (Note 1) T = 25C I 225 A C LM Pulsed Collector Current (Note 2) I 225 A CM Diode Forward Current T = 25C I 75 A C F Diode Forward Current T = 100C 50 A C Pulsed Diode Maximum Forward Current (Note 2) I 225 A FM Maximum Power Dissipation T = 25C P 455 W C D Maximum Power Dissipation T = 100C 227 W C Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 225 A, R = 20 , Inductive Load CC GE C G 2. Repetitive Rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction to Case (IGBT) 0.33 C/W R JC Thermal Resistance, Junction to Case (Diode) R 0.65 C/W JC Thermal Resistance, Junction to Ambient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH75T65SHD FGH75T65SHDF155 TO2473LD 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 1 mA 650 V CES GE C Temperature Coefficient of Breakdown BV / T I = 1 mA, Referenced to 25C 0.6 V/C CES J C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS GE Threshold Voltage V I = 75 mA, V = V 4.0 5.5 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 75 A, V = 15 V 1.6 2.1 V CE(sat) C GE I = 75 A, V = 15 V, T = 175C 2.28 V C GE C www.onsemi.com 2