Product Information

FGH75T65SQDTL4

FGH75T65SQDTL4 electronic component of ON Semiconductor

Datasheet
IGBT Transistors 650V FS4 Trench IGBT

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.3899 ea
Line Total: USD 7.39

431 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
395 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

FGH75T65SQDTL4
ON Semiconductor

1 : USD 7.0319
10 : USD 6.1133
30 : USD 5.5534
100 : USD 5.0861

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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The FGH75T65SQDTL4 is a 650 Volt (V), 4 Amp (A) Field Stop (FS4) Trench Insulated Gate Bipolar Transistor (IGBT) manufactured by ON Semiconductor. It features low gate voltage drop which contributes to low power dissipation and improved efficiency. It has a maximum junction temperature of 175 °C and a collector emitter voltage of 600 V. This component is suitable for power management applications, such as motor control, power conversion, and power switching and regulating.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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