X-On Electronics has gained recognition as a prominent supplier of FGH75T65SQDT-F155 igbt transistors across the USA, India, Europe, Australia, and various other global locations. FGH75T65SQDT-F155 igbt transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

FGH75T65SQDT-F155

FGH75T65SQDT-F155 electronic component of ON Semiconductor
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See Product Specifications
Part No.FGH75T65SQDT-F155
Manufacturer: ON Semiconductor
Category:IGBT Transistors
Description: IGBT Transistors 650V 40A FS4 TRENCH IGBT
Datasheet: FGH75T65SQDT-F155 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.5046 ea
Line Total: USD 10.5

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 07 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 16.4392
10 : USD 14.1084
30 : USD 12.418
100 : USD 11.0239
500 : USD 10.7853
1000 : USD 10.6673

0 - WHS 2


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 10.5046
10 : USD 6.9131
25 : USD 6.5926
100 : USD 5.7271
450 : USD 4.9792

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We proudly offer the FGH75T65SQDT-F155 IGBT Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the FGH75T65SQDT-F155 IGBT Transistors.

IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQDT Description Using novel field stop IGBT technology, ON Semiconductors new th series of field stop 4 generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. V I CES C Features 650 V 75 A Max Junction Temperature T = 175C J Positive Temperature Coefficient for Easy Parallel Operating C High Current Capability Low Saturation Voltage: V = 1.6 V (Typ.) I = 75 A CE(sat) C G 100% of the Parts Tested for I LM High Input Impedance E Fast Switching Tighten Parameter Distribution E C This Device is PbFree and is RoHS Compliant G Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC COLLECTOR (FLANGE) TO2473LD CASE 340CH MARKING DIAGRAM Y&Z&3&K FGH75T65 SQDT Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65SQDT = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2019 Rev. 3 FGH75T65SQDT/DFGH75T65SQDT ABSOLUTE MAXIMUM RATINGS Symbol Description FGH50T65SQDF155 Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 150 A C C T = 100C 75 A C I (Note 1) Pulsed Collector Current T = 25C 300 A LM C I (Note 2) Pulsed Collector Current 300 A CM I Diode Forward Current T = 25C 150 A F C Diode Forward Current T = 100C 75 A C I Pulsed Diode Maximum Forward Current 300 A FM P Maximum Power Dissipation T = 25C 375 W D C T = 100C 188 W C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 300 A, R = 21 , Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH75T65SQDTF155 Unit R (IGBT) Thermal Resistance, Junction to Case, Max. 0.4 C/W JC R (Diode) Thermal Resistance, Junction to Case, Max. 0.65 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Qty per Tube FGH75T65SQDTF155 FGH75T65SQDT TO2473LD Tube 30 www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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