Digital FET, Dual P-Channel FDG6304P General Description These dual PChannel logic level enhancement mode field effect transistors are produced using ON Semiconductor proprietary, high cell density, DMOS technology. This very high density process is www.onsemi.com especially tailored to minimize onstate resistance. This device has been designed especially for low voltage applications as a replacement S2 G2 for bipolar digital transistors and small signal MOSFETs. D1 Features D2 G1 25 V, 0.41 A Continuous, 1.5 A Peak S1 R = 1.1 V = 4.5 V SC88/SC706/SOT363 DS(ON) GS CASE 419B02 R = 1.5 V = 2.7 V DS(ON) GS Very Low Level Gate Drive Requirements Allowing Direct MARKING DIAGRAM Operation in 3 V Circuits (V < 1.5 V) GS(th) GateSource Zener for ESD Ruggedness (>6 kV Human Body Model) 04M Compact Industry Standard SC706 Surface Mount Package These Devices are PbFree and are RoHS Compliant 04 = Specific Device Code M = Assembly Operation Month ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter FDG6304P Units PIN CONNECTIONS V DrainSource Voltage 25 V DSS V GateSource Voltage 8 V GSS 1 or 4* 6 or 3 I Drain/Output Current Continuous 0.41 A D Pulsed 1.5 P Maximum Power Dissipation (Note 1) 0.3 W 2 or 5 5 or 2 D T , T Operating and Storage Temperature 55 to +150 C J STG Range 3 or 6 4 or 1* ESD Electrostatic Discharge Rating 6.0 kV MILSTD883D Human Body Model (100 pF / 1500 ) Stresses exceeding those listed in the Maximum Ratings table may damage the *The pinouts are symmetrical pin 1 and 4 are device. If any of these limits are exceeded, device functionality should not be interchangeable. assumed, damage may occur and reliability may be affected. Units inside the carrier can be of either orientation and will not affect the functionality of the device. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: July, 2021 Rev. 7 FDG6304P/DFDG6304P THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Thermal Resistance, JunctiontoAmbient (Note 1) 415 C/W JA 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. R = 415C/W on JC CA JA minimum pad mounting on FR 4 board in still air. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V =0V, I = 250 A 25 V DSS GS D BV / T Breakdown Voltage Temperature I = 250 A, Referenced to 25 C 22 mV/ C DSS J D Coefficient I Zero Gate Voltage Drain Current V = 20 V, V =0V 1 A DSS DS GS V = 20 V, V =0V, T = 55 C 10 A DS GS J I GateBody Leakage Current V = 8V, V =0V 100 nA GSS GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V =V , I = 250 A 0.65 0.82 1.5 V GS(th) DS GS D V / T Gate Threshold Voltage I = 250 A, Referenced to 25 C 2 mV/ C GS(th) J D Temperature Coefficient R Static DrainSource V = 4.5 V, I = 0.41 A 0.85 1.1 DS(on) GS D OnResistance V = 4.5 V, I = 0.41 A, 1.2 1.9 GS D T = 125 C J V = 2.7 V, I = 0.25 A 1.15 1.5 GS D I OnState Drain Current V = 4.5 V, V = 5V 1.5 A D(on) GS DS g Forward Transconductance V = 5V, I = 0.41 A 0.9 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V =10V, V = 0 V, f = 1.0 MHz 62 pF iss DS GS C Output Capacitance 34 pF oss C Reverse Transfer Capacitance 10 pF rss SWITCHING CHARACTERISTICS (Note 2) V = 5V, I = 0.5 A, t Turn-On Delay Time 7 15 ns D(on) DD D V = 4.5 V, R =6 GS GEN t Turn-On Rise Time 8 16 ns r t Turn-Off Delay Time 55 80 ns D(off) t Turn-Off Fall Time 35 60 ns f Q Total Gate Charge V = 5V, I = 0.41 A, 1.1 1.5 nC g DS D V = 4.5 V GS Q GateSource Charge 0.31 nC gs Q GateDrain Charge 0.29 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Source Current 0.25 A S V DrainSource Diode Forward V =0V, I = 0.25 A (Note 2) 0.85 1.2 V SD GS S Voltage Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% www.onsemi.com 2