X-On Electronics has gained recognition as a prominent supplier of FDG6306P mosfet across the USA, India, Europe, Australia, and various other global locations. FDG6306P mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FDG6306P ON Semiconductor

FDG6306P electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FDG6306P
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET P-Ch PowerTrench Specified 2.5V
Datasheet: FDG6306P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.2725
6000 : USD 0.2448
15000 : USD 0.2279
30000 : USD 0.2161
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.7609
10 : USD 0.6339
100 : USD 0.4727
500 : USD 0.3714
1000 : USD 0.287
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.7609
10 : USD 0.6339
100 : USD 0.4727
500 : USD 0.3714
1000 : USD 0.287
N/A

Obsolete
0 - WHS 4

MOQ : 3000
Multiples : 3000
3000 : USD 0.2376
6000 : USD 0.22
9000 : USD 0.22
12000 : USD 0.22
15000 : USD 0.22
N/A

Obsolete
0 - WHS 5

MOQ : 1977
Multiples : 1
1977 : USD 0.1649
N/A

Obsolete
0 - WHS 6

MOQ : 1
Multiples : 1
1 : USD 0.9545
10 : USD 0.8262
100 : USD 0.2473
500 : USD 0.1991
1000 : USD 0.1581
3000 : USD 0.1457
N/A

Obsolete
0 - WHS 7

MOQ : 3
Multiples : 1
3 : USD 0.7224
25 : USD 0.4396
56 : USD 0.2912
152 : USD 0.2758
N/A

Obsolete
0 - WHS 8

MOQ : 32
Multiples : 1
32 : USD 0.418
50 : USD 0.2508
100 : USD 0.2458
N/A

Obsolete
0 - WHS 9

MOQ : 34
Multiples : 1
34 : USD 0.321
100 : USD 0.2246
250 : USD 0.2202
N/A

Obsolete
0 - WHS 10

MOQ : 3000
Multiples : 3000
3000 : USD 0.2029
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDG6306P www.onsemi.com FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 0.6 A, 20 V. R = 420 m V = 4.5 V DS(ON) GS gate version of ON Semiconductors advanced R = 630 m V = 2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate Low gate charge drive voltage (2.5V 12V). High performance trench technology for extremely Applications low R DS(ON) Battery management Compact industry standard SC70-6 surface mount Load switch package S G S D 1 or 4 6 or 3 D G 2 or 5 5 or 2 G D G 4 or 1 Pin 1 D 3 or 6 S S SC70-6 The pinouts are symmetrical pin 1 and pin 4 are interchangeable. o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 12 V GSS ID Drain Current Continuous (Note 1) 0.6 A Pulsed 2.0 P Power Dissipation for Single Operation (Note 1) 0.3 W D T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1) 415 C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .06 FDG6306P 7 8mm 3000 units Semiconductor Components Industries, LLC, 2017 Publication Order Number: Aug, 2017, Rev.1.4 FDG6306P

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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