X-On Electronics has gained recognition as a prominent supplier of FDG6318P mosfet across the USA, India, Europe, Australia, and various other global locations. FDG6318P mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FDG6318P ON Semiconductor

FDG6318P electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.FDG6318P
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET Dual PCh Digital
Datasheet: FDG6318P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.3266
6000 : USD 0.2826
N/A

Obsolete
0 - WHS 2


Multiples : 3000
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.5859
30 : USD 0.5485
75 : USD 0.4285
150 : USD 0.3665
375 : USD 0.3626
750 : USD 0.3368
1500 : USD 0.3252
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 0.6478
10 : USD 0.532
100 : USD 0.3432
1000 : USD 0.2753
3000 : USD 0.2622
9000 : USD 0.2622
24000 : USD 0.2526
45000 : USD 0.249
99000 : USD 0.2431
N/A

Obsolete
     
Manufacturer
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RoHS - XON
Icon ROHS
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
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We are delighted to provide the FDG6318P from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDG6318P and other electronic components in the MOSFET category and beyond.

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FDG6318P January 2003 FDG6318P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode 0.5 A, 20 V. R = 780 m V = 4.5 V DS(ON) GS MOSFET are produced using Fairchild Semiconductors R = 1200 m V = 2.5 V DS(ON) GS advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage Very low level gate drive requirements allowing direct applications as a replacement for bipolar digital transistors and small signal MOSFETS. operation in 3V circuits (V < 1.5V). GS(th) Applications Compact industry standard SC70-6 surface mount package Battery management S G S 1 or 4 6 or 3 D D G 2 or 5 5 or 2 G D G 4 or 1 Pin 1 D 3 or 6 S S SC70-6 The pinouts are symmetrical pin 1 and pin 4 are interchangeable. o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 12 V GSS ID Drain Current Continuous (Note 1) 0.5 A Pulsed 1.8 P Power Dissipation for Single Operation (Note 1) 0.3 W D T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1) 415 C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .38 FDG6318P 7 8mm 3000 units FDG6318P Rev C (W) 2003 Fairchild Semiconductor Corporation

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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