Product Information

FDG6332C_F085

FDG6332C_F085 electronic component of ON Semiconductor

Datasheet
Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.7/0.6A; 0.3W; SC70-6

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1301 ea
Line Total: USD 390.3

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May


Multiples : 1

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FDG6332C_F085
ON Semiconductor


0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May


Multiples : 1

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FDG6332C_F085
ON Semiconductor


0 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May


Multiples : 1

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FDG6332C_F085
ON Semiconductor


0 - WHS 4


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

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FDG6332C_F085
ON Semiconductor

1 : USD 0.2821
20 : USD 0.2821
150 : USD 0.1795
750 : USD 0.1655

0 - WHS 5


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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FDG6332C_F085
ON Semiconductor

1 : USD 1.0418
10 : USD 0.9189
100 : USD 0.2906
500 : USD 0.2191
1000 : USD 0.1784
3000 : USD 0.1656

0 - WHS 6


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3
Multiples : 1

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FDG6332C_F085
ON Semiconductor

3 : USD 0.3961
25 : USD 0.2873
78 : USD 0.1907
214 : USD 0.1799

0 - WHS 7


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

FDG6332C_F085
ON Semiconductor

3000 : USD 0.1301

0 - WHS 8


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

FDG6332C_F085
ON Semiconductor

3000 : USD 0.154

     
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. -F085 20V N & P-Channel PowerTrench MOSFETs FDG6332C FDG6332C - F085 PowerTrench M The N & P-Channel MOSFETs are produced using 0.7 A, 20V. R = 300 m = 4.5 V ON Semiconductors advanced PowerTrench R = 400 m = 2.5 V proc ess that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. 0.6 A, 20V. R = 420 m = 4.5 V R = 630 m = 2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint Low gate charge for applic ations where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. High performance trench technology for extremely DC/DC converter SC70-6 package: small footprint (51% smaller than SSOT-6) low profile (1mm thick) Load switch LCD display inverter Qualified to AEC Q101 RoHS Compliant S G 1 6 D 2 5 D G Pin 1 S 3 4 o T =25 C unless otherwise noted A Units V Drain-Source Voltage V V Gate-Source Voltage V I Drain Current Continuous A D Pulsed P Power Dissipation for Single Operation W D T , T Operating and Storage Junction Temperature Range 55 to +150 C J Thermal Characteristics C/W R Thermal Resistance, Junction-to-Ambient Device Marking Reel Size Tape width Quantity FDG6332C- F085 3000 units Semiconductor Components Industries, LLC. Publication Order Number: FDG6332C-F085/D September-2017, Rev. 3 2009 8mm 7 .32 Device Package Marking and Ordering Information JA 415 (Note 1) STG 0.3 (Note 1) 2 2.1 0.6 0.7 (Note 1) GSS 12 12 DSS 20 20 Q2 Q1 Parameter Symbol Absolute Maximum Ratings Complementary SC70-6 Applications DS(ON) low R GS DS(ON) V GS DS(ON) V Q2 GS DS(ON) V GS DS(ON) V Q1 Features General Description OSFETs N & P-Channel 20V

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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