Product Information

DAN222G

DAN222G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 80V 100mA
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0185 ea
Line Total: USD 55.5

491790 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
5233 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

DAN222G
ON Semiconductor

1 : USD 0.0358
10 : USD 0.0355
25 : USD 0.0352
100 : USD 0.0251
250 : USD 0.0226
500 : USD 0.0201
1000 : USD 0.0197
3000 : USD 0.0197
6000 : USD 0.0197

491790 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

Stock Image

DAN222G
ON Semiconductor

3000 : USD 0.0185

5233 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 365
Multiples : 1

Stock Image

DAN222G
ON Semiconductor

365 : USD 0.0226
500 : USD 0.0201
1000 : USD 0.0197

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

DAN222, NSVDAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT416/SC75 package which is designed DAN222, NSVDAN222 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I V = 70 V 0.1 Adc R R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V I = 100 A 80 Vdc R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time t (Note 2) I = 5.0 mA, V = 6.0 V, R = 100 , I = 0.1 I 4.0 ns rr F R L rr R 2. t Test Circuit on following page. rr TYPICAL ELECTRICAL CHARACTERISTICS 10 100 T = 150C A T = 85C A T = 125C A 1.0 10 T = - 40C A T = 85C A 0.1 T = 55C 1.0 T = 25C A A 0.01 T = 25C A 0.1 0.001 50 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Reverse Current 1.0 0.9 0.8 0.7 0.6 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Diode Capacitance

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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