Product Information

NSVBAS21M3T5G

NSVBAS21M3T5G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching SS SWITCHING DIODE
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8000: USD 0.0392 ea
Line Total: USD 313.6

15520 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 8000  Multiples: 8000
Pack Size: 8000

 More Buying Options & Price Grid(s)

Availability Price Quantity
15520 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 8000
Multiples : 8000

Stock Image

NSVBAS21M3T5G
ON Semiconductor

8000 : USD 0.0392
16000 : USD 0.0382
24000 : USD 0.0375
48000 : USD 0.0368
56000 : USD 0.0368
96000 : USD 0.0368

59878 - WHS 2


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 10
Multiples : 10

Stock Image

NSVBAS21M3T5G
ON Semiconductor

10 : USD 0.0818
100 : USD 0.0641
300 : USD 0.0554
1000 : USD 0.0488
5000 : USD 0.0408
8000 : USD 0.0381

15520 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 8000
Multiples : 8000

Stock Image

NSVBAS21M3T5G
ON Semiconductor

8000 : USD 0.0423
24000 : USD 0.0412
48000 : USD 0.038
56000 : USD 0.0372

15520 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 8000
Multiples : 8000

Stock Image

NSVBAS21M3T5G
ON Semiconductor

8000 : USD 0.0392
16000 : USD 0.0382
24000 : USD 0.0375
48000 : USD 0.0368

Read More Specifications

     
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Product Category
RoHS - XON
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Mxhts
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Additional Infomation About Product

BAS21M3T5G 250V High Voltage Switching Diode The BAS21M3T5G device is a spinoff of our popular SOT23 threeleaded device. It is designed for high voltage switching applications and is housed in the SOT723 surface mount package. BAS21M3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current I Adc R (V = 200 Vdc) 0.1 R (V = 200 Vdc, T = 150C) 100 R J V 250 Vdc Reverse Breakdown Voltage (I = 100 Adc) BR (BR) Forward Voltage V Vdc F (I = 100 mAdc) 1.0 F (I = 200 mAdc) 1.25 F Diode Capacitance (V = 0, f = 1.0 MHz) C 5.0 pF R D Reverse Recovery Time (I = I = 30 mAdc, I = 3.0 mAdc, R = 100) t 50 ns F R R(REC) L rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. I = 3.0 mA R(REC) 50 OUTPUT 50 INPUT I R SAMPLING V PULSE R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 30 mA MEASURED F R at I = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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