Product Information

NSD16F3T5G

NSD16F3T5G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching SS SWITCHING DIODE
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0182 ea
Line Total: USD 0.02

1584 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1584 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NSD16F3T5G
ON Semiconductor

1 : USD 0.0182
10 : USD 0.0178
25 : USD 0.0176
50 : USD 0.0173
100 : USD 0.017
250 : USD 0.0166
500 : USD 0.0166
1000 : USD 0.0166

8038 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

NSD16F3T5G
ON Semiconductor

1 : USD 0.3979
10 : USD 0.2749
100 : USD 0.1058
1000 : USD 0.0886
24000 : USD 0.0644

1584 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 119
Multiples : 1

Stock Image

NSD16F3T5G
ON Semiconductor

119 : USD 0.017
250 : USD 0.0166

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

NSD16F3T5G Switching Diode The NSD16F3T5G device is a spinoff of our popular SOT23 threeleaded device. It is designed for switching applications and is housed in the SOT1123 surface mount package. This device is ideal for lowpower surface mount applications where board space is at a premium. NSD16F3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 100 Vdc) 1.0 R (V = 75 Vdc, T = 150C) 50 R J (V = 25 Vdc, T = 150C) 30 R J Reverse Breakdown Voltage V 75 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Diode Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Forward Recovery Voltage V 1.75 Vdc FR (I = 10 mAdc, t = 20 ns) F r Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 50 ) F R L Stored Charge Q 45 pC S (I = 10 mAdc to V = 5.0 Vdc, R = 500 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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