Product Information

NSDEMP11XV6T1G

NSDEMP11XV6T1G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 80V 100mA Quad Common Anode
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.276 ea
Line Total: USD 0.28

10393 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2612 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NSDEMP11XV6T1G
ON Semiconductor

1 : USD 0.0935
10 : USD 0.0917
100 : USD 0.0917
1000 : USD 0.0917

10 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NSDEMP11XV6T1G
ON Semiconductor

1 : USD 0.2872
10 : USD 0.2872

10393 - WHS 3


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

NSDEMP11XV6T1G
ON Semiconductor

1 : USD 0.276
10 : USD 0.192
100 : USD 0.0966
1000 : USD 0.0725
4000 : USD 0.0679
8000 : USD 0.0587
24000 : USD 0.0563
100000 : USD 0.0541

2612 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 82
Multiples : 1

Stock Image

NSDEMP11XV6T1G
ON Semiconductor

82 : USD 0.0917

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

NSDEMP11XV6T1, NSDEMP11XV6T5 Common Anode Quad Array Switching Diode These Common Anode Epitaxial Planar QUAD Diodes are designed for use in ultra high speed switching applications. The NSDEMP11XV6T1, NSDEMP11XV6T5 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I V = 70 V 0.1 Adc R R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V 0 Vdc I = 100 A R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time t (Note 3) I = 5.0 mA, V = 6.0 V, R = 100 , I = 0.1 I 4.0 ns rr F R L rr R 3. t Test Circuit for NSDEMP11XV6T1 in Figure 4. rr TYPICAL ELECTRICAL CHARACTERISTICS 100 10 T = 150C A T = 85C A T = 125C A 1.0 10 T = 40C A T = 85C A 0.1 T = 55C 1.0 A T = 25C A 0.01 T = 25C A 0.001 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Voltage Figure 2. Reverse Current 1.75 1.5 1.25 1.0 0.75 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Diode Capacitance t r t p t rr I F t t 10% R I = 0.1 I L rr R A 90% I = 5.0 mA F V = 6 V R V R t = 2 s p R = 100 L t = 0.35 ns r RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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