Product Information

EE-SX1105

Hot EE-SX1105 electronic component of Omron

Datasheet
Optical Switches, Transmissive, Phototransistor Output 2mm SLOT TYPE 30V

Manufacturer: Omron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0656 ea
Line Total: USD 1.07

120 - Global Stock
Ships to you between
Wed. 22 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
31616 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 25
Multiples : 25

Stock Image

EE-SX1105
Omron

25 : USD 1.8125
250 : USD 1.3125
500 : USD 1.2163
1000 : USD 1.0738
2500 : USD 1.0513
5000 : USD 0.9987
7500 : USD 0.9912
10000 : USD 0.9575

120 - WHS 2


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

EE-SX1105
Omron

1 : USD 1.0656
10 : USD 0.8844
30 : USD 0.7937
250 : USD 0.6789
500 : USD 0.6245
1000 : USD 0.5983

1159 - WHS 3


Ships to you between
Wed. 22 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

EE-SX1105
Omron

1 : USD 1.1198
10 : USD 0.9385
30 : USD 0.8479
250 : USD 0.7271
500 : USD 0.6727
1000 : USD 0.6465

9331 - WHS 4


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

EE-SX1105
Omron

1 : USD 2.1505
10 : USD 1.541
100 : USD 1.265
250 : USD 1.1615
500 : USD 1.1155
1000 : USD 0.9672
3000 : USD 0.9165
5000 : USD 0.8878
10000 : USD 0.874

4947 - WHS 5


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 50
Multiples : 25

Stock Image

EE-SX1105
Omron

50 : USD 2.4006
250 : USD 1.7067
500 : USD 1.5534
1000 : USD 1.3473
2500 : USD 1.2962

194 - WHS 6


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 56
Multiples : 1

Stock Image

EE-SX1105
Omron

56 : USD 1.8024

34611 - WHS 7


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 91
Multiples : 1

Stock Image

EE-SX1105
Omron

91 : USD 0.8625
250 : USD 0.8125

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Slot Width
Aperture Width
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Mounting Style
Maximum Operating Temperature
Minimum Operating Temperature
Series
If - Forward Current
Length
Output Type
Sensing Distance
Sensing Method
Termination Style
Wavelength
Width
Brand
Number Of Channels
Cnhts
Fall Time
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Vf - Forward Voltage
Vr - Reverse Voltage
LoadingGif

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Photomicrosensor (Transmissive) EE-SX1105 Dimensions Features Ultra-compact with a sensor width of 4.9 mm and a slot width of 2 mm. Note: All units are in millimeters unless otherwise indicated. Low-height of 3.3 mm. PCB mounting type. High resolution with a 0.4-mm-wide aperture. RoHS Compliant. Absolute Maximum Ratings (Ta = 25C) Two, C0.7 Gate Item Symbol Rated value Emitter Forward current I 50 mA (see note 1) Optical F axis Pulse forward current I --- FP Four, 0.5 Reverse voltage V 5 V Two, R0.15 R Four, 0.4 5 min. Two, R0.3 Detector CollectorEmitter V 30 V CEO Four, voltage EmitterCollector V 4.5 V ECO voltage Cross section AA Collector current I 30 mA C Collector dissipation P 80 mW (see note 1) C Internal Circuit Ambient Operating T 25 C to 85 C opr temperature Storage T 30 C to 85 C stg 260 C (see note 2) Soldering temperature T sol Note: 1. Refer to the temperature rating chart if the ambient tem- Terminal No. Name perature exceeds 25 C. A Anode 2. Complete soldering within 3 seconds. K Cathode Unless otherwise specified, Ordering Information C Collector the tolerances are 0.2 mm. E Emitter Description Model Photomicrosensor (transmissive) EE-SX1105 Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.3 V typ., 1.6 V max. I = 50 mA F F Reverse current I 10 A max. V = 5 V R R Peak emission wavelength 950 nm typ. I = 50 mA P F Detector Light current I 0.2 mA min. I = 20 mA, V = 5 V L F CE Dark current I 500 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated voltage V 0.4 V max. I = 20 mA, I = 0.1 mA CE (sat) F L Peak spectral sensitivity wavelength 800 nm typ. V = 5 V P CE Rising time tr 10 s typ. V = 5 V, R = 100 , I = 20 mA CC L F Falling time tf 10 s typ. V = 5 V, R = 100 , I = 20 mA CC L F Photomicrosensor (Transmissive) EE-SX1105 127 Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) 2.5 Ta = 25C V = 5 V CE 2 1.5 1 0.5 Ambient temperature Ta (C) Forward voltage V (V) Forward current I (mA) F F Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) 160 Ta = 25C I = 20 mA F 140 V = 30 V V = 5 V CE CE V = 20 V CE 120 I = 50 mA F V = 10 V CE 100 I = 40 mA F 80 I = 30 mA F 60 I = 20 mA F 40 I = 10 mA F 20 0 40 20 0 20 40 60 80 100 CollectorEmitter voltage V (V) Ambient temperature Ta (C) Ambient temperature Ta (C) CE Response Time vs. Light Current Sensing Position Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) Ta = 25C I = 20 mA F I = 20 mA F V = 5 V V = 5 V CE CE V = 5 V CE Ta = 25C Ta = 25C RL = 1K RL = 500 RL = 100 Light current l (mA) Distance d (mm) Distance d (mm) t Response Time Measurement Circuit Input 90 % Output 10 % Input Output 128 Photomicrosensor (Transmissive) EE-SX1105 Response time tr, tf (s) Light current I (mA) Forward current I (mA) L F Collector dissipation Pc (mW) Relative light current I (%) L Forward current I (mA) F Relative light current I (%) L Dark current I (nA) Light current I (mA) D L Relative light current I (%) L

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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