EE-SX1103

Photomicrosensor (Transmissive) EE-SX1103 Dimensions Features Ultra-compact with a sensor width of 5 mm and a slot width of 2 mm. Note: All units are in millimeters unless otherwise indicated. PCB mounting type. High resolution with a 0.4-mm-wide aperture. RoHS Compliant. Absolute Maximum Ratings (Ta = 25C) Two, C0.5 Gate Item Symbol Rated value Optical axis Emitter Forward current I 50 mA (see note 1) F Pulse forward current I --- FP Reverse voltage V 5 V R Two, C0.3 dia. 5 min. Detector CollectorEmitter V 30 V CEO voltage EmitterCollector V 4.5 V ECO Four, 0.5 Four, 0.2 voltage Collector current I 30 mA C Collector dissipation P 80 mW (see note 1) C Internal Circuit 25 C to 85 C Ambient Operating T opr temperature Storage T 30 C to 100 C stg Soldering temperature T 260 C (see note 2) sol Note: 1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name ature exceeds 25 C. A Anode 2. Complete soldering within 3 seconds. Unless otherwise specified, the K Cathode tolerances are 0.2 mm. C Collector Ordering Information E Emitter Description Model Photomicrosensor (transmissive) EE-SX1103 Electrical and Optical Characteristics (Ta = 25 C) Item Symbol Value Condition Emitter Forward voltage V 1.3 V typ., 1.6 V max. I = 50 mA F F Reverse current I 10 A max. V = 5 V R R Peak emission wavelength 950 nm typ. I = 50 mA P F Detector Light current I 0.5 mA min. I = 20 mA, V = 5 V L F CE Dark current I 500 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK CollectorEmitter saturated voltage V 0.4 V max. I = 20 mA, I = 0.3 mA CE (sat) F L Peak spectral sensitivity wavelength 800 nm typ. V = 5 V P CE Rising time tr 10 s typ. V = 5 V, R = 100 , I = 20 mA CC L F Falling time tf 10 s typ. V = 5 V, R = 100 , I = 20 mA CC L F Photomicrosensor (Transmissive) EE-SX1103 125 Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) Ta = 25C V = 5 V CE Forward current I (mA) F Ambient temperature Ta (C) Forward voltage V (V) F Relative Light Current vs. Ambi- Light Current vs. CollectorEmitter Dark Current vs. Ambient ent Temperature Characteristics Voltage Characteristics (Typical) Temperature Characteristics (Typical) (Typical) Ta = 25C I = 20 mA F V = 5 V CE I = 50 mA F V = 30 V CE V = 20 V CE I = 40 mA F V = 10 V CE I = 30 mA F I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) CE Ambient temperature Ta (C) Ambient temperature Ta (C) Response Time vs. Light Current Sensing Position Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V CC I = 20 mA F I = 20 mA F Ta = 25C V = 5 V CE V = 5 V CE Ta = 25C Ta = 25C Light current I (mA) Distance d (mm) Distance d (mm) t Response Time Measurement Circuit Input 90 % Output 10 % Input Output 126 Photomicrosensor (Transmissive) EE-SX1103 Forward current I (mA) F Light current I (mA) L Response time tr, tf (s) Collector dissipation P (mW) C Relative light current I (%) L Forward current I (mA) F Relative light current I (%) L Light current I (mA) L Dark current I (nA) Relative light current I (%) D L